Kioxia corporation (20240324198). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Hanae Ishihara of Yokkaichi Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324198 titled 'SEMICONDUCTOR STORAGE DEVICE
The patent application describes a device with multiple regions, including semiconductor pillars and insulator columns extending through conductive layers.
- The device has a first region with semiconductor pillars through conductive layers, a second region with similar pillars, and a third region between them with insulator columns through conductive layers.
- The third region consists of a fourth region where a third conductive layer connects first and second conductive layers, and a fifth region where the third conductive layer is connected to a contact plug.
- Insulator columns in the fourth region have a smaller diameter than those in the fifth region.
Potential Applications: - This technology could be used in semiconductor devices for improved electrical connections and insulation. - It may find applications in integrated circuits and microelectronics for enhanced performance.
Problems Solved: - Provides a more efficient way to connect semiconductor pillars and conductive layers. - Offers better insulation between different regions of the device.
Benefits: - Improved electrical connectivity. - Enhanced insulation properties. - Potential for higher performance in semiconductor devices.
Commercial Applications: - This technology could be valuable in the semiconductor industry for developing advanced electronic devices with improved functionality.
Questions about the technology: 1. How does the size difference of insulator columns in different regions affect the overall performance of the device? 2. What specific advantages does the connection of the third conductive layer to a contact plug in the fifth region provide?
Original Abstract Submitted
a device includes a first region including first semiconductor pillars extending through first conductive layers; a second region including second semiconductor pillars extending through second conductive layers; and a third region disposed between the first region and the second region and including insulator columns extending through third conductive layers. the third region includes a fourth region and a fifth region. in the fourth region, one third conductive layer electrically connects one first conductive layer and one second conductive layer to each other, and in the fifth region, one third conductive layer is connected to a contact plug. a first diameter of a first subset of the insulator columns provided in the fourth region is smaller than a second diameter of a second subset of the insulator columns provided in the fifth region.
