Kioxia corporation (20240324195). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Hakuba Kitagawa of Yokkaichi (JP)
Mariko Sumiya of Yokkaichi (JP)
Kohei Nakamura of Yokkaichi (JP)
Masayuki Fukumoto of Yokkaichi (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324195 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The semiconductor device manufacturing method described in the abstract involves the formation of an insulating film on the outer peripheral portion of a surface of a first substrate. Following this step, a silicon layer is formed in contact with the surface inside the insulating film. Subsequently, a porous silicon layer is created by making the silicon layer porous using an anodization method.
- Formation of insulating film on the outer peripheral portion of a substrate surface
- Formation of a silicon layer inside the insulating film
- Creation of a porous silicon layer through an anodization method
Potential Applications: - Semiconductor device manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Improved efficiency in semiconductor device manufacturing - Enhanced performance of electronic components - Facilitates the development of advanced nanotechnology applications
Benefits: - Increased precision in manufacturing processes - Higher quality electronic devices - Potential for new innovations in semiconductor technology
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and sensors. The method offers a more efficient and precise way to manufacture semiconductor components, leading to improved performance and reliability in electronic products. The market implications include potential advancements in the semiconductor industry and increased competitiveness for companies adopting this innovative manufacturing method.
Questions about Semiconductor Device Manufacturing Method: 1. How does the formation of a porous silicon layer impact the performance of semiconductor devices? 2. What are the key advantages of using an anodization method in creating a porous silicon layer in semiconductor manufacturing processes?
Frequently Updated Research: Researchers are constantly exploring new methods to enhance the efficiency and performance of semiconductor devices. Stay updated on the latest advancements in semiconductor manufacturing technologies to remain at the forefront of innovation in the electronics industry.
Original Abstract Submitted
a semiconductor device manufacturing method of embodiments includes: forming an insulating film on an outer peripheral portion of a surface of a first substrate; after forming the insulating film, forming a silicon layer in contact with the surface inside the insulating film; and forming a porous silicon layer by making the silicon layer inside the insulating film porous using an anodization method.
