Kioxia corporation (20240324170). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Masaya Toda of Yokkaichi Mie (JP)
Kazuhiro Matsuo of Kuwana Mie (JP)
Kota Takahashi of Latham NY (US)
Kenichiro Toratani of Fujisawa Kanagawa (JP)
Wakako Moriyama of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324170 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The semiconductor device manufacturing method involves transferring a substrate with exposed indium and metal surfaces to a film forming device chamber. Indium reducing gas is supplied at a low temperature to transition indium to a gaseous state, followed by the supply of a film forming gas at a higher temperature to form a film on both surfaces.
- Indium reducing gas is supplied to transition indium to a gaseous state.
- Film forming gas is supplied at a higher temperature to form a film on the surfaces.
- The method allows for the creation of a first film on both the first and second surfaces of the substrate.
- This process takes place in a chamber of a film forming device.
- The method enables efficient manufacturing of semiconductor devices with specific surface structures.
Potential Applications: - Semiconductor device manufacturing - Thin film deposition processes - Electronics industry for various applications
Problems Solved: - Efficient formation of films on specific surfaces - Controlled transition of indium to a gaseous state - Precise manufacturing of semiconductor devices
Benefits: - Enhanced control over film formation - Improved efficiency in semiconductor manufacturing - Consistent and reliable results in thin film deposition
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be utilized in the production of various semiconductor devices, such as microchips, sensors, and electronic components. The method offers a more precise and efficient way to create specific surface structures, leading to improved performance and reliability in electronic devices.
Questions about Semiconductor Device Manufacturing Method: 1. How does the method ensure the controlled transition of indium to a gaseous state? The method supplies an indium reducing gas at a specific low temperature where indium can transition to a gaseous state. 2. What are the potential applications of this semiconductor device manufacturing method? The method can be applied in various industries, including semiconductor manufacturing, thin film deposition processes, and electronics production.
Original Abstract Submitted
a semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.
