Kioxia corporation (20240321362). MEMORY DEVICE AND METHOD simplified abstract
Contents
MEMORY DEVICE AND METHOD
Organization Name
Inventor(s)
Hideki Igarashi of Yokohama Kanagawa (JP)
Takaya Izumi of Yokohama Kanagawa (JP)
MEMORY DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321362 titled 'MEMORY DEVICE AND METHOD
The memory device described in the abstract includes two strings of transistors, each connected to separate wirings and a shared third wiring. The device also features a circuit for executing a write operation on specific transistors in each string, involving the application of different voltages to the wirings and transistor gates.
- The write operation consists of applying a first voltage to the wirings and a second voltage to the gates of the targeted transistors.
- If a current flows between the first and third wirings but not between the second and third wirings during the operation, the circuit applies a third voltage to the first wiring and a higher fourth voltage to the second wiring.
Potential Applications: - This technology can be utilized in various memory storage devices, such as solid-state drives and computer memory modules. - It can also be applied in embedded systems, IoT devices, and other electronics requiring non-volatile memory.
Problems Solved: - Enhances the efficiency and reliability of write operations in memory devices. - Improves the performance and longevity of the memory storage system.
Benefits: - Faster and more precise write operations. - Increased data retention and overall system stability.
Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Data Storage This technology can revolutionize the data storage industry by providing faster and more reliable memory devices for a wide range of applications. It can be integrated into various consumer electronics, industrial equipment, and data centers to improve data processing speeds and overall system performance.
Questions about the technology: 1. How does this memory device technology compare to traditional memory storage methods? 2. What are the potential cost implications of implementing this advanced memory device technology in commercial products?
Original Abstract Submitted
a memory device includes first and second strings including transistors, a first wiring connected to the first string, a second wiring connected to the second string, a third wiring connected to both strings, and a circuit for executing a write operation on a first transistor of the first string and a second transistor of the second string. the operation includes a first operation by which a first voltage is applied to the wirings and a second operation by which a second voltage is applied to gates of the first and second transistors. when a current flows between the first and third wirings but does not flow between the second and third wirings in the first operation, the circuit causes a third voltage to be applied to the first wiring, and causes a fourth voltage higher than the third voltage to be applied to the second wiring in the second operation.
