Kioxia corporation (20240321359). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Yoichi Minemura of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321359 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of a stacked body with conductive layers separated by insulating layers, a semiconductor film providing channels for memory cell transistors, and an insulating film between the conductive layers and the semiconductor film. A control circuit manages the program voltage for the target memory cell transistor during a write operation, as well as the transfer voltage for other memory cell transistors not involved in the write operation, adjusting the transfer voltage based on the number of bits being written.
- Stacked body with conductive and insulating layers
- Semiconductor film for memory cell transistors
- Insulating film between layers
- Control circuit for program and transfer voltages during write operations
- Variable transfer voltage based on number of bits being written
Potential Applications: - High-density memory storage devices - Faster data writing capabilities - Improved energy efficiency in memory devices
Problems Solved: - Enhanced control over write operations - Increased efficiency in memory storage - Better performance in semiconductor memory devices
Benefits: - Higher data storage capacity - Improved data transfer speeds - Enhanced overall performance of memory devices
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Performance Data Storage This technology could be utilized in: - Consumer electronics - Data centers - Automotive systems - Industrial applications
Prior Art: Researchers can explore prior patents related to semiconductor memory devices, stacked body structures, and control circuits for memory operations.
Frequently Updated Research: Stay informed about advancements in semiconductor memory technology, stacked body designs, and control circuit innovations.
Questions about Semiconductor Memory Devices: 1. How does this technology improve data storage efficiency? This technology enhances data storage efficiency by optimizing write operations and controlling voltage levels effectively.
2. What impact does the variable transfer voltage have on memory cell performance? The variable transfer voltage ensures that each memory cell transistor receives the appropriate voltage based on the number of bits being written, leading to more efficient data storage and retrieval processes.
Original Abstract Submitted
a semiconductor memory device includes a stacked body in which conductive layers are stacked with an insulating layer interposed therebetween, a semiconductor film to provide a channel for a plurality of memory cell transistors having gates electrically connected to the conductive layers of the stacked body, respectively, an insulating film extending in the stacking direction between the conductive layers and the semiconductor film, and a control circuit configured to control a program voltage to be applied to a conductive layer electrically connected to a memory cell transistor that is a target of a write operation, and a transfer voltage to be applied to conductive layers electrically connected to other memory cell transistors that are not the target of the write operation, wherein the control circuit is configured to vary the transfer voltage to be applied depending on a number of bits that are being written in the write operation.
