Kioxia corporation (20240321335). MAGNETIC MEMORY DEVICE simplified abstract
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Yosuke Kobayashi of Seoul (KR)
Naoki Matsushita of Seoul (KR)
Masayoshi Iwayama of Seoul (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321335 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation: The magnetic memory device described in the patent application consists of various components such as interconnects, memory cells, transistors, sense amplifiers, and a control circuit. The memory cell includes a magnetoresistive effect element and a selector element connected in series between the interconnects. During a read operation, the control circuit charges the first interconnect to a first voltage and discharges it via the transistor by applying a second voltage to the gate end of the transistor.
Key Features and Innovation:
- Magnetic memory device with magnetoresistive effect element and selector element in series.
- Control circuit for read operations charging and discharging interconnects.
- Utilization of transistors and sense amplifiers for memory operations.
Potential Applications:
- Data storage in electronic devices.
- Computer memory systems.
- Industrial automation for data processing.
Problems Solved:
- Efficient read operations in magnetic memory devices.
- Enhanced data storage capabilities.
- Improved reliability and performance of memory systems.
Benefits:
- Faster data access speeds.
- Higher data storage density.
- Lower power consumption.
Commercial Applications: The technology described in the patent application could have significant commercial applications in the development of advanced memory devices for various electronic systems, leading to improved performance and efficiency in data storage and processing.
Questions about Magnetic Memory Devices 1. How does the magnetoresistive effect element contribute to the functionality of the memory cell? 2. What are the advantages of using a selector element in series with the magnetoresistive effect element in the memory cell?
Original Abstract Submitted
a magnetic memory device according to an embodiment includes a magnetic memory device includes first and second interconnect, a memory cell, a transistor, first and second sense amplifiers, and a control circuit. the memory cell includes a magnetoresistive effect element and a selector element. the magnetoresistive effect element and the selector element are coupled in series between the first and second interconnect. in a read operation, the control circuit is further configured to: charge the first interconnect to a first voltage; and discharge the first interconnect via the transistor by applying a second voltage to a gate end of the transistor.
