Kioxia corporation (20240320076). MEMORY SYSTEM AND METHOD simplified abstract
Contents
- 1 MEMORY SYSTEM AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY SYSTEM AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory System Controller
- 1.13 Original Abstract Submitted
MEMORY SYSTEM AND METHOD
Organization Name
Inventor(s)
Hirokazu Nagashima of Fujisawa Kanagawa (JP)
Hiroki Kobayashi of Kamakura Kanagawa (JP)
MEMORY SYSTEM AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240320076 titled 'MEMORY SYSTEM AND METHOD
Simplified Explanation
The abstract describes a memory system controller that performs operations on storage regions based on fail-bit counts calculated from data comparisons.
- Acquires data by comparing determination voltage and threshold voltage of memory cells in a storage region.
- Calculates fail-bit count of the acquired data.
- Executes or skips a second operation based on the calculated fail-bit count.
- Updates determination voltage based on the fail-bit count of the second data.
Key Features and Innovation
- Data acquisition based on voltage comparison.
- Fail-bit count calculation for data analysis.
- Dynamic operation execution based on fail-bit count.
- Determination voltage update for memory cell optimization.
Potential Applications
This technology can be applied in various memory systems, such as solid-state drives, to enhance data reliability and performance.
Problems Solved
The technology addresses issues related to data integrity and storage efficiency in memory systems by optimizing memory cell operations based on fail-bit counts.
Benefits
- Improved data reliability.
- Enhanced memory system performance.
- Optimized memory cell operations.
Commercial Applications
- Solid-state drives (SSDs).
- Data centers.
- Embedded systems.
Prior Art
Readers can explore prior research on memory system optimization, fail-bit analysis, and voltage-based data processing to understand the background of this technology.
Frequently Updated Research
Researchers are continuously exploring new methods to improve memory system efficiency and reliability through fail-bit analysis and voltage optimization.
Questions about Memory System Controller
How does the fail-bit count impact memory system performance?
The fail-bit count determines the level of data integrity and reliability in memory systems. By analyzing fail-bit counts, the controller can optimize memory cell operations to enhance performance and reduce errors.
What are the potential challenges in implementing determination voltage updates based on fail-bit counts?
Implementing determination voltage updates based on fail-bit counts may require sophisticated algorithms and precise calibration to ensure accurate adjustments without compromising memory system stability.
Original Abstract Submitted
a controller of a memory system executes a first operation on storage regions. the first operation includes (i) acquiring first data based on comparison between a determination voltage and a threshold voltage of each memory cell in a first storage region; (ii) calculating a first fail-bit count of the first data; and (iii) executing or skipping a second operation based on the calculated first fail-bit count. the second operation includes (i) acquiring the second data based on comparison between the determination voltage and the threshold voltage of each memory cell in the first storage region; (ii) calculating a second fail-bit count of the second data; and (iii) updating the determination voltage based on the second fail-bit count.
