Kioxia corporation (20240313527). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shigefumi Ishiguro of Yokohama Kanagawa (JP)
Yasuhiro Suematsu of Yokohama Kanagawa (JP)
Masaru Koyanagi of Ota Tokyo (JP)
Maya Inagaki of Yokohama Kanagawa (JP)
Kentaro Watanabe of Yokohama Kanagawa (JP)
Shoki Ito of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313527 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a protection circuit connected to two interconnections, each receiving a different voltage. The protection circuit consists of resistors, capacitors, and nodes to safeguard the device from voltage fluctuations.
- The protection circuit is designed to prevent damage to the semiconductor device by regulating the voltage levels at the interconnections.
- The first resistor and capacitor are connected to the first interconnection, while the second resistor, capacitor, and third resistor are connected to the second interconnection.
- The capacitors help to stabilize the voltage at the nodes, while the resistors control the flow of current within the circuit.
- By strategically placing resistors and capacitors in the circuit, the protection circuit effectively safeguards the semiconductor device from voltage spikes and fluctuations.
- This innovative design enhances the reliability and longevity of the semiconductor device, making it suitable for various applications in electronics.
Potential Applications: - This technology can be applied in integrated circuits, microprocessors, and other semiconductor devices to protect them from voltage surges. - It can be used in consumer electronics, automotive electronics, and industrial equipment where voltage fluctuations are common.
Problems Solved: - Prevents damage to semiconductor devices caused by voltage spikes and fluctuations. - Ensures the stable operation of electronic devices in various applications.
Benefits: - Increased reliability and longevity of semiconductor devices. - Enhanced protection against voltage surges and fluctuations. - Improved performance and efficiency of electronic systems.
Commercial Applications: Title: Voltage Protection Circuit for Semiconductor Devices This technology can be commercialized for use in the manufacturing of integrated circuits, microprocessors, and other semiconductor devices. It can cater to the needs of industries such as consumer electronics, automotive electronics, and industrial equipment where voltage protection is crucial.
Questions about Voltage Protection Circuit for Semiconductor Devices: 1. How does the protection circuit regulate voltage levels in the semiconductor device? The protection circuit uses a combination of resistors and capacitors to stabilize the voltage at different nodes within the circuit, ensuring the safe operation of the semiconductor device. 2. What are the potential implications of this technology in the consumer electronics market? This technology can significantly improve the reliability and performance of consumer electronic devices by protecting them from voltage fluctuations and spikes.
Original Abstract Submitted
a semiconductor device includes a protection circuit electrically connected to a first interconnection and a second interconnection, a first voltage and a second voltage supplied to the first interconnection and the second interconnection, respectively. the protection circuit includes: a first resistor connected between the first interconnection and a first node; a first capacitor connected between the second interconnection and the first node; a second resistor connected between the second interconnection and a second node located; a second capacitor connected between the second interconnection and the second node, and connected in parallel to the second resistor; a third resistor connected between the first interconnection and a third node; and a third capacitor connected between the second interconnection and the third node.
