Kioxia corporation (20240312911). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takafumi Masuda of Kawasaki (JP)
Mutsumi Okajima of Yokkaichi (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312911 titled 'SEMICONDUCTOR MEMORY DEVICE
The abstract of a semiconductor memory device patent application describes a memory layer with a via-wiring extending in a first direction, connecting a semiconductor layer to a gate electrode. The memory layer also includes a memory portion and a wiring in different directions with respect to the semiconductor layer.
- The semiconductor memory device includes a memory layer with a via-wiring connecting a semiconductor layer to a gate electrode.
- The memory layer has a memory portion and a wiring in different directions with respect to the semiconductor layer.
- The via-wiring has surfaces opposed and not opposed to the gate electrode in a cross-sectional view.
- A part of the gate electrode is located on the memory portion side with respect to the via-wiring.
Potential Applications: - This technology can be used in various semiconductor memory devices such as DRAM, SRAM, and flash memory. - It can also be applied in embedded systems, mobile devices, and computer systems for efficient memory storage.
Problems Solved: - Enhances the electrical connection between the semiconductor layer and the gate electrode. - Improves the integration and performance of memory layers in semiconductor devices.
Benefits: - Increased efficiency and reliability of semiconductor memory devices. - Enhanced data storage and processing capabilities in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be commercially used in the production of high-performance memory modules for consumer electronics, data centers, and IoT devices. The improved memory layer design can lead to faster data access and improved overall system performance.
Questions about Semiconductor Memory Devices: 1. How does the via-wiring enhance the electrical connection in the memory layer? The via-wiring in the memory layer of the semiconductor device improves the electrical connection between the semiconductor layer and the gate electrode, ensuring efficient data processing and storage.
2. What are the potential commercial applications of this advanced memory technology? The advanced semiconductor memory devices can be utilized in various consumer electronics, data centers, and IoT devices to enhance data storage and processing capabilities, leading to improved system performance and efficiency.
Original Abstract Submitted
a semiconductor memory device includes a memory layer and a via-wiring extending in a first direction. the memory layer includes a semiconductor layer electrically connected to the via-wiring, a gate electrode including parts opposed to surfaces of the semiconductor layer on one side and the other side in the first direction, a memory portion disposed on one side in a second direction with respect to the semiconductor layer, and a wiring disposed on the other side in the second direction with respect to the semiconductor layer. in a cross-sectional surface perpendicular to the first direction and including one of the parts of the gate electrode, the via-wiring includes a surface opposed to the gate electrode and a surface not opposed to the gate electrode. a part of the gate electrode is disposed on a memory portion side with respect to the via-wiring in the second direction.
