Kioxia corporation (20240312513). SEMICONDUCTOR MEMORY DEVICE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Tomohiko Ito of Kawasaki Kanagawa (JP)

Hiroshi Yoshihara of Fujisawa Kanagawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240312513 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract includes two memory strings, each with a memory cell transistor, and a shared word line connected to both transistors. During a read operation, the threshold voltage of the first memory cell transistor is lower than a certain voltage, while the threshold voltage of the second memory cell transistor is equal to or higher than that voltage. The control circuit supplies a voltage equal to or lower than the specified voltage to the word line during this operation.

  • The semiconductor memory device has a unique configuration with two memory strings and a shared word line.
  • During a read operation, the threshold voltages of the memory cell transistors are controlled to ensure accurate data retrieval.
  • The control circuit plays a crucial role in supplying the appropriate voltage to the word line for efficient operation.

Potential Applications: - This technology can be used in various electronic devices requiring non-volatile memory storage. - It can enhance the performance and reliability of data storage systems in computers, smartphones, and other gadgets.

Problems Solved: - Ensures accurate and reliable data retrieval from the memory cells. - Optimizes the read operation by controlling the threshold voltages effectively.

Benefits: - Improved data storage efficiency and reliability. - Enhanced performance of electronic devices using this memory technology.

Commercial Applications: Title: Innovative Semiconductor Memory Device for Enhanced Data Storage This technology can be utilized in the production of high-performance solid-state drives (SSDs), memory cards, and other data storage devices. It can cater to the growing demand for faster and more reliable memory solutions in the consumer electronics market.

Prior Art: Readers interested in exploring prior art related to this technology can refer to patents and research papers on semiconductor memory devices, specifically focusing on memory cell transistor configurations and read operation optimizations.

Frequently Updated Research: Researchers are continuously exploring ways to enhance the efficiency and performance of semiconductor memory devices. Stay updated on the latest advancements in memory technology to leverage the benefits of cutting-edge innovations.

Questions about Semiconductor Memory Devices: 1. How does the shared word line configuration impact the performance of the memory device? 2. What are the potential advancements in semiconductor memory technology that could further improve data storage capabilities?


Original Abstract Submitted

according to one embodiment, a semiconductor memory device includes a first memory string including a first memory cell transistor; a second memory string including a second memory cell transistor; a first word line commonly coupled to a gate of each of the first memory cell transistor and the second memory cell transistor; and a control circuit, wherein during a first read operation of reading data from the first memory string, a threshold voltage of the first memory cell transistor is less than a first voltage, a threshold voltage of the second memory cell transistor is equal to or greater than the first voltage, and the control circuit is configured to supply a voltage equal to or less than the first voltage to the first word line.