Kioxia corporation (20240304602). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Tomoya Sanuki of Yokkaichi (JP)
Tetsuaki Utsumi of Yokohama (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304602 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a memory cell, a first voltage generator, and a second voltage generator. The memory cell is positioned above a substrate, with the first voltage generator located between the substrate and the memory cell. The first voltage generator generates a first voltage for the memory cell, while the second voltage generator, also positioned between the substrate and the memory cell, generates the same first voltage and has a circuit configuration equivalent to the first voltage generator.
- Memory cell positioned above a substrate
- First voltage generator between substrate and memory cell
- Second voltage generator also between substrate and memory cell
- First voltage generator generates a first voltage for the memory cell
- Second voltage generator generates the same first voltage and has an equivalent circuit configuration
Potential Applications: - Semiconductor memory devices - Integrated circuits - Electronic devices requiring memory storage
Problems Solved: - Efficient voltage generation for memory cells - Space-saving design for voltage generators in semiconductor devices
Benefits: - Improved performance of semiconductor memory devices - Enhanced reliability and stability of voltage supply to memory cells - Compact design for efficient use of space in electronic devices
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Performance This technology can be utilized in various electronic devices such as smartphones, tablets, laptops, and other consumer electronics to improve memory storage capabilities and overall device performance. The compact design and efficient voltage generation make it ideal for use in high-demand applications where reliable memory storage is crucial.
Questions about Semiconductor Memory Devices: 1. How does the placement of the voltage generators impact the performance of the memory cell? 2. What are the potential cost implications of implementing this technology in electronic devices?
Original Abstract Submitted
according to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. the memory cell is provided above a substrate. the first voltage generator is provided between the substrate and the memory cell. the first voltage generator is configured to generate a first voltage to be supplied to the memory cell. the second voltage generator is provided between the substrate and the memory cell. the second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.
