Kioxia corporation (20240304576). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yuya Kiyomura of Kuwana Mie (JP)
Ayako Kawanishi of Yokkaichi Mie (JP)
Yuta Taguchi of Yokkaichi Mie (JP)
Ayumi Watarai of Ama Aichi (JP)
Ippei Kume of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304576 titled 'SEMICONDUCTOR DEVICE
The memory device described in the patent application consists of two chips, one with a first electrode and the other with a second electrode. The first electrode has a first conductive film with specific surface properties, including a first surface in contact with the second electrode, a second surface spaced apart from the boundary region, and a third surface between the first and second surfaces. The first conductive film also has a first portion with a higher copper orientation ratio than the second portion.
- The memory device includes two chips with different electrodes.
- The first electrode has a unique structure with specific surface properties.
- The first portion of the first conductive film has a higher copper orientation ratio than the second portion.
Potential Applications: - This technology could be used in various memory devices and storage systems. - It may find applications in the semiconductor industry for improved performance.
Problems Solved: - Enhanced memory device performance. - Improved conductivity and efficiency in data storage.
Benefits: - Higher performance and efficiency in memory devices. - Potential cost savings in semiconductor manufacturing.
Commercial Applications: Title: Advanced Memory Devices for Enhanced Performance This technology could be utilized in the production of high-performance memory devices for consumer electronics, data centers, and other technological applications. The improved conductivity and efficiency offered by this innovation could lead to faster and more reliable memory storage solutions in the market.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching advancements in memory device structures and materials in the semiconductor industry.
Frequently Updated Research: Researchers are continually exploring new materials and structures to enhance memory device performance. Stay updated on the latest developments in semiconductor technology to learn about potential advancements in this field.
Questions about Memory Device Technology: 1. How does the unique structure of the first electrode contribute to the overall performance of the memory device? The specific surface properties of the first electrode, including the different copper orientation ratios in its portions, play a crucial role in improving conductivity and efficiency in data storage.
2. What potential applications beyond memory devices could benefit from the innovative features of this technology? In addition to memory devices, this technology's unique electrode structure could have applications in other semiconductor devices requiring high performance and efficiency.
Original Abstract Submitted
a memory device includes a first chip including a first electrode and a second chip including a second electrode. the first electrode includes a first conductive film having a first surface in contact with the second electrode at a boundary region of the first and second electrodes, a second surface spaced apart from the boundary region, and a third surface between the first surface and the second surface, and having a first portion on the first surface side and a second portion on the second surface side, and includes a second conductive film covering the second surface and the third surface of the first conductive film. a (111) orientation ratio of copper contained in the first portion is higher than a (111) orientation ratio of copper contained in the second portion.
