Kioxia corporation (20240304548). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Toru Nakanishi of Yokohama Kanagawa (JP)
Fumitaka Arai of Yokohama Kanagawa (JP)
Kouji Matsuo of Ama Aichi (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304548 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes multiple gate electrode layers, semiconductor layers, and wiring layers arranged in a specific configuration.
- The device features first to fourth gate electrode layers extending in a first direction.
- A first semiconductor layer is positioned between the first and third gate electrode layers, as well as between the second and fourth gate electrode layers.
- A first wiring layer extends in a third direction and is connected to the first gate electrode layer.
- Additional wiring layers are connected to the other gate electrode layers in the device.
- The first wiring layer is sandwiched between the third and fourth wiring layers, with the second wiring layer in between the first and fourth wiring layers.
Potential Applications: - This technology can be used in various semiconductor memory devices, such as flash memory or DRAM. - It can also be applied in other integrated circuit designs that require precise layering of components.
Problems Solved: - The specific configuration of gate electrode, semiconductor, and wiring layers optimizes the performance and efficiency of the semiconductor memory device. - The arrangement helps in reducing signal interference and improving overall functionality.
Benefits: - Enhanced performance and reliability of semiconductor memory devices. - Improved data storage and retrieval capabilities. - Efficient use of space within the device for compact designs.
Commercial Applications: - This technology can be utilized in the production of consumer electronics, computer systems, and industrial equipment that rely on semiconductor memory devices.
Questions about the technology: 1. How does the specific arrangement of gate electrode layers contribute to the efficiency of the semiconductor memory device? 2. What are the potential challenges in implementing this technology in large-scale production processes?
Original Abstract Submitted
a semiconductor memory device of the embodiment includes first to fourth gate electrode layers which extend in a first direction, a first semiconductor layer which extends in a second direction intersecting the first direction and is provided between the first gate electrode layer and the third gate electrode layer, and between the second gate electrode layer and the fourth gate electrode layer, a first wiring layer which extends in a third direction intersecting the first direction and the second direction and is electrically connected to the first gate electrode layer, a second wiring layer which is electrically connected to the second gate electrode layer, a third wiring layer which extends in the third direction and is electrically connected to the third gate electrode layer, and a fourth wiring layer which extends in the third direction and is electrically connected to the fourth gate electrode layer. the first wiring layer is provided between the third wiring layer and the fourth wiring layer, and the second wiring layer is provided between the first wiring layer and the fourth wiring layer.
