Kioxia corporation (20240297145). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sadatoshi Murakami of Yokkaichi (JP)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240297145 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The method described in the patent application involves manufacturing a semiconductor device by forming layers with different refractive indices on substrates, bonding the substrates together, irradiating the back surface with a laser beam, and peeling off the first substrate to leave the circuit layer on the second substrate.
- Forming layers with different refractive indices on substrates
- Bonding the substrates together
- Irradiating the back surface with a laser beam
- Peeling off the first substrate to leave the circuit layer on the second substrate
Potential Applications: - Semiconductor manufacturing - Optoelectronic devices - Photonic integrated circuits
Problems Solved: - Efficient manufacturing of semiconductor devices - Integration of different layers with varying refractive indices
Benefits: - Improved performance of semiconductor devices - Enhanced optical properties - Cost-effective manufacturing process
Commercial Applications: - Production of advanced semiconductor devices for various industries - Integration into optical communication systems - Development of cutting-edge optoelectronic products
Questions about the technology: 1. How does the use of layers with different refractive indices impact the performance of the semiconductor device? 2. What are the potential challenges in scaling up this manufacturing process for mass production?
Frequently Updated Research: - Ongoing research on optimizing the laser irradiation process for improved efficiency - Studies on the integration of additional layers with specific optical properties for enhanced device performance.
Original Abstract Submitted
a method of manufacturing a semiconductor device according to one embodiment includes: forming, on a first substrate, a first layer having a refractive index lower than a refractive index of the first substrate; forming, on the first layer, a second layer having a refractive index lower than a refractive index of the first layer; forming a first circuit layer on the second layer; bonding the first and second substrate after forming the first circuit layer; irradiating a back surface of the first substrate with a laser beam after bonding the first substrate and the second substrate; and peeling the first substrate so that the first circuit layer remains on a side of the second substrate after irradiating the back surface of the first substrate with the laser beam.
