Kioxia corporation (20240297078). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE
Organization Name
Inventor(s)
Mariko Sumiya of Yokkaichi Mie (JP)
Takuro Okubo of Yokkaichi Mie (JP)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240297078 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE
The method described in the abstract involves manufacturing a semiconductor device by forming insulator or conductor layers, a porous layer, and device films on substrates, then bonding the substrates together and separating them to leave layers and portions on each substrate.
- Formation of insulator/conductor layers, porous layer, and device films on substrates
- Bonding and separating substrates to create layers and portions on each
- Semiconductor device manufacturing process
- Utilization of porous layers for device fabrication
- Integration of multiple devices on separate substrates
Potential Applications: - Semiconductor industry for device manufacturing - Electronics for various applications - Research and development in semiconductor technology
Problems Solved: - Efficient manufacturing of semiconductor devices - Integration of multiple devices on separate substrates - Utilization of porous layers for device fabrication
Benefits: - Enhanced device performance - Simplified manufacturing process - Cost-effective production of semiconductor devices
Commercial Applications: Title: Semiconductor Device Manufacturing Method This technology can be applied in the semiconductor industry for efficient and cost-effective production of devices. It can also be utilized in electronics manufacturing for various applications, leading to improved device performance and reliability.
Prior Art: Readers can explore prior research in semiconductor device manufacturing methods, porous layer utilization, and device integration on separate substrates to gain a deeper understanding of the technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device manufacturing methods, porous layer technologies, and device integration techniques to enhance your knowledge in this field.
Questions about Semiconductor Device Manufacturing Method: 1. How does the method described in the abstract improve semiconductor device manufacturing processes? 2. What are the potential challenges in implementing this technology in commercial semiconductor production?
Original Abstract Submitted
in one embodiment, a method of manufacturing a semiconductor device includes forming a first insulator or a first conductor layer on a first substrate, forming a porous layer on the first insulator or the first conductor layer, forming a first film including a first device, above the porous layer, and forming a second film including a second device, on a second substrate. the method further includes bonding the first substrate and the second substrate to sandwich the first insulator or the first conductor layer, the porous layer, the first film, and the second film. the method further includes separating the first substrate and the second substrate such that the first insulator or the first conductor layer and a first portion of the porous layer remain above the first substrate, and a second portion of the porous layer remains above the second substrate.
