Kioxia corporation (20240297045). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

kioxia corporation

Inventor(s)

Yoshio Mizuta of Yokkaichi (JP)

Sadatoshi Murakami of Yokkaichi (JP)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240297045 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The patent application describes a method of manufacturing a semiconductor device involving the use of multiple projections on a substrate, stacking films, bonding surfaces, laser beam irradiation, and substrate peeling.

  • The method includes preparing a first substrate with projections in a two-dimensional layout.
  • Stacking a first film over the projections on the first substrate.
  • Stacking a second film on a second substrate.
  • Bonding the principal surfaces of the first and second films.
  • Irradiating with a laser beam from the first substrate.
  • Peeling the first substrate.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry

Problems Solved: - Improving semiconductor device manufacturing processes - Enhancing the performance of semiconductor devices

Benefits: - Increased efficiency in manufacturing - Enhanced device performance

Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be utilized in the production of high-performance semiconductor devices, catering to industries such as consumer electronics, telecommunications, and automotive.

Prior Art: Readers can explore prior research in semiconductor device manufacturing methods, laser processing techniques, and substrate bonding technologies.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor manufacturing, laser technology, and materials science to enhance the efficiency and effectiveness of this method.

Questions about Semiconductor Device Manufacturing: 1. How does this method improve the performance of semiconductor devices? - This method enhances device performance by optimizing the manufacturing process and ensuring precise alignment of components. 2. What are the potential challenges in implementing this manufacturing method on an industrial scale? - Industrial-scale implementation may require fine-tuning of parameters and equipment to achieve consistent results.


Original Abstract Submitted

according to one embodiment, there is provided a method of manufacturing a semiconductor device. the method includes preparing a first substrate on which multiple projections distributed in a two-dimensional fashion are formed. the method includes stacking a first film over the multiple projections on the first substrate. the method includes stacking a second film on a second substrate. the method includes bonding a principal surface of the first film which is disposed on an opposite side of the first substrate to a principal surface of the second film which is disposed on an opposite side of the second substrate. the method includes performing irradiation with a laser beam from the first substrate. the method includes peeling the first substrate. a diameter of a spot area formed by the laser beam is larger than an average pitch between the projections arranged on the principal surface of the first substrate.