Kabushiki kaisha toshiba (20240321967). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunsuke Asaba of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321967 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a silicon carbide layer with multiple gate electrodes and silicon carbide regions, along with first and second electrodes.
- Silicon carbide layer with first and second gate electrodes
- Multiple silicon carbide regions within the layer
- First electrode with multiple contact faces in contact with different silicon carbide regions
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Improved efficiency in power electronics - Enhanced performance in high-temperature environments - Increased reliability in electric vehicle components
Benefits: - Higher power density - Better thermal conductivity - Longer lifespan of the device
Commercial Applications: Title: "Advanced Silicon Carbide Semiconductor Device for Power Electronics" This technology can be utilized in industries such as electric vehicles, renewable energy, and industrial automation, leading to more efficient and reliable systems.
Prior Art: Readers can explore prior research on silicon carbide semiconductor devices in the field of power electronics and high-temperature applications to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest advancements in silicon carbide semiconductor devices for power electronics and other applications to ensure you are leveraging the most cutting-edge technology.
Questions about Silicon Carbide Semiconductor Devices: 1. What are the key advantages of using silicon carbide in semiconductor devices? 2. How does the design of this semiconductor device contribute to its overall performance and efficiency?
Original Abstract Submitted
a semiconductor device according to an embodiment includes: a silicon carbide layer having a first face and a second face; first and second gate electrodes; a first silicon carbide region; a second silicon carbide region between the first silicon carbide region and the first face; a third silicon carbide region between the second silicon carbide region and the first face; a fourth silicon carbide region between the third silicon carbide region and the first face; a first electrode; and a second electrode. the first electrode includes a first portion, and the first portion includes a first contact face in contact with the fourth silicon carbide region, a second contact face in contact with the fourth silicon carbide region, a third contact face in contact with the fourth silicon carbide region and the third silicon carbide region, and a fourth contact face in contact with the third silicon carbide region.
