Kabushiki kaisha toshiba (20240321773). SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH simplified abstract

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SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Kazuya Nishihori of Shibuya Tokyo (JP)

Keita Masuda of Kawasaki Kanagawa (JP)

Takahiro Nakagawa of Kawasaki Kanagawa (JP)

Akihiro Imada of Yokohama Kanagawa (JP)

SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321773 titled 'SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH

Simplified Explanation:

This patent application describes a semiconductor device with a circuit element, wiring layers, and an element protection member to enhance performance and reliability.

  • The semiconductor device includes a semiconductor substrate with a circuit element, such as a switching element, on its upper surface.
  • A first wiring layer above the substrate contains multiple first wires connected to the circuit element.
  • An element protection member made of a conductive material surrounds the circuit element to protect it.
  • The first wiring layer is insulated by an oxide film with a high dielectric constant, improving the device's overall efficiency.

Key Features and Innovation:

  • Integration of a circuit element, wiring layers, and an element protection member in a semiconductor device.
  • Use of an oxide insulation film with a high dielectric constant for improved performance.
  • Enhanced reliability and efficiency of the semiconductor device.

Potential Applications:

  • Consumer electronics
  • Automotive electronics
  • Industrial automation

Problems Solved:

  • Protection of circuit elements from external factors
  • Improved insulation for wiring layers
  • Enhanced performance and reliability of semiconductor devices

Benefits:

  • Increased device efficiency
  • Extended device lifespan
  • Enhanced overall performance

Commercial Applications:

Potential commercial applications include the manufacturing of advanced electronic devices for various industries, such as consumer electronics, automotive, and industrial automation. The technology's improved performance and reliability can lead to the development of more efficient and durable products, attracting a wide range of customers in the market.

Questions about Semiconductor Device Technology:

1. How does the use of an element protection member improve the reliability of semiconductor devices? 2. What are the specific advantages of using an oxide insulation film with a high dielectric constant in semiconductor devices?


Original Abstract Submitted

according to the present embodiment, a semiconductor device includes a semiconductor substrate, a circuit element, a first wiring layer, and an element protection member. the circuit element is formed on an upper surface side of the semiconductor substrate and includes at least one switching element. the first wiring layer includes a plurality of first wires electrically connected to the circuit element and is provided above the semiconductor substrate via a first interlayer dielectric film. the element protection member extends along an upper surface of the semiconductor substrate to discontinuously surround the circuit element with a conductive member. a first wire insulation film between the first wires in the first wiring layer is formed by an oxide insulation film with a dielectric constant of 3.5 or more.

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