Kabushiki kaisha toshiba (20240313106). SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Kouta Tomita of Nonoichi Ishikawa (JP)

Tatsuya Nishiwaki of Yokohama Kanagawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240313106 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of a complex structure involving multiple electrodes and semiconductor regions of different conductivity types.

  • The device includes a first electrode, a first semiconductor region of a first conductivity type, an insulating film, a second electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a third electrode forming a Schottky junction.
  • The third electrode is in contact with the first semiconductor region on one side and with the second and third semiconductor regions on the other side, with a contact portion located above the second semiconductor region.
  • The device is designed to facilitate the flow of electrical current through the different semiconductor regions and electrodes, enabling specific electronic functions.

Potential Applications:

  • This semiconductor device could be used in various electronic applications such as power electronics, signal processing, and communication systems.
  • It may find applications in devices requiring precise control of electrical currents and voltages, such as sensors and actuators.

Problems Solved:

  • The device addresses the need for efficient and reliable semiconductor components with specific electrical characteristics.
  • It provides a solution for creating Schottky junctions and controlling the flow of current in semiconductor devices.

Benefits:

  • Improved performance and efficiency in electronic circuits.
  • Enhanced control over electrical properties in semiconductor devices.
  • Potential for miniaturization and integration in complex electronic systems.

Commercial Applications:

  • This technology could be valuable for semiconductor manufacturers producing advanced electronic components for various industries.
  • It may have implications for the development of next-generation electronic devices with enhanced functionality and performance.

Questions about the Semiconductor Device: 1. How does the design of the semiconductor device contribute to its overall performance and functionality? 2. What are the specific advantages of using a Schottky junction in this semiconductor device design?


Original Abstract Submitted

a semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.