Kabushiki kaisha toshiba (20240313093). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroki Hatada of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313093 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a complex structure involving multiple semiconductor regions and insulating films, as well as a second electrode adjacent to a high-concentration region in the second semiconductor region.
- First semiconductor region of a first conductivity type
- Second semiconductor region of a second conductivity type
- Third semiconductor region of the first conductivity type
- Insulating film in all three regions
- Second electrode adjacent to the second semiconductor region
- Boundary region in the second region with a high-concentration region
- Insulating film with a first region in contact with the high-concentration region and a second region in contact with a low-concentration region
Potential Applications: - Semiconductor devices - Electronics industry - Power management systems
Problems Solved: - Enhanced performance of semiconductor devices - Improved efficiency in power management systems
Benefits: - Increased functionality - Higher efficiency - Improved reliability
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Power Management This technology can be utilized in various electronic devices, power management systems, and semiconductor applications, leading to improved performance and efficiency in the industry.
Questions about the technology: 1. How does the complex structure of the semiconductor device contribute to its overall performance? 2. What are the specific advantages of having a second electrode adjacent to the high-concentration region in the second semiconductor region?
Original Abstract Submitted
a semiconductor device according to an embodiment includes: a first semiconductor region of a first conductivity type disposed; a second semiconductor region of a second conductivity type disposed on the first region; a third semiconductor region of the first conductivity type disposed on the second region; an insulating film disposed in the first, second and third regions; and a second electrode disposed in the insulating film so as to be adjacent to the second region via the insulating film. the second region includes a boundary region that is in contact with the insulating film and faces the second electrode, the boundary region includes a high-concentration region, the insulating film includes a first region in contact with the high-concentration region and a second region in contact with a low-concentration region, and a thickness of the second region is smaller than a thickness of the first region.
