Kabushiki kaisha toshiba (20240313083). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313083 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The semiconductor device manufacturing method described in the abstract involves several key steps:
- First ion implantation of aluminum into a silicon carbide layer with a specific dose amount.
- Performing a heat treatment at a high temperature of 1600°C or higher.
- Etching the surface of the silicon carbide layer using plasma generated from a gas containing halogen and oxygen.
- Further etching the surface in an atmosphere containing hydrogen plasma or atomic hydrogen.
- Forming a silicon oxide film on the surface.
- Finally, forming a gate electrode on the silicon oxide film.
Potential Applications: - This method can be applied in the manufacturing of advanced semiconductor devices with improved performance and reliability. - It can be used in the production of high-power and high-frequency electronic components.
Problems Solved: - Enhances the efficiency and durability of semiconductor devices. - Improves the overall quality of electronic components.
Benefits: - Increased performance and reliability of semiconductor devices. - Enhanced durability and longevity of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be utilized in the production of high-performance electronic devices for various industries such as telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does the use of aluminum in the ion implantation process impact the performance of the semiconductor device? 2. What are the specific advantages of using a silicon carbide layer in semiconductor manufacturing?
Original Abstract Submitted
a semiconductor device manufacturing method of embodiments includes: performing first ion implantation for implanting aluminum into a silicon carbide layer with a first dose amount; performing first heat treatment at a temperature equal to or more than 1600� c.; performing first etching process for etching a surface of the silicon carbide layer in an atmosphere containing plasma generated from a gas containing halogen and oxygen; performing second etching process for etching the surface in an atmosphere containing hydrogen plasma or atomic hydrogen; forming a silicon oxide film on the surface; and forming a gate electrode on the silicon oxide film.
