Kabushiki kaisha toshiba (20240313055). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Organization Name
Inventor(s)
Hirofumi Nagano of Fujisawa, Kanagawa (JP)
Kumiko Sato of Kanazawa, Ishikawa (JP)
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313055 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Simplified Explanation: The semiconductor device described in the patent application consists of different regions and a gate region, each with specific characteristics and positions on the semiconductor substrate.
- The first region is of a first conductive type and is located on one main surface side of the semiconductor substrate.
- The second region is of a second conductive type and is formed in a different region of the surface layer from the first region.
- The third region is situated between the first and second regions on the surface layer, with a predetermined impurity concentration distribution.
- The gate region is positioned at one end of the third region through a gate oxide layer.
- The third region includes a first change region of the impurity concentration distribution corresponding to the position of the gate region.
Key Features and Innovation:
- Different regions with specific conductive types and impurity concentration distributions.
- Gate region positioned at one end of the third region through a gate oxide layer.
- First change region in the third region corresponding to the position of the gate region.
Potential Applications: The technology described in the patent application can be used in various semiconductor devices, particularly in the field of integrated circuits and electronic components.
Problems Solved: This technology addresses the need for precise control and manipulation of impurity concentration distributions in semiconductor devices, improving their performance and efficiency.
Benefits:
- Enhanced control over impurity concentration distributions.
- Improved performance and efficiency of semiconductor devices.
- Potential for more advanced integrated circuits and electronic components.
Commercial Applications: The technology has potential commercial applications in the semiconductor industry, particularly in the development of advanced integrated circuits for various electronic devices.
Questions about Semiconductor Devices: 1. How does the impurity concentration distribution impact the performance of semiconductor devices? 2. What are the key differences between the first, second, and third regions in the semiconductor device?
Frequently Updated Research: Researchers are continually exploring new methods to enhance the precision and efficiency of impurity concentration control in semiconductor devices, leading to advancements in integrated circuit technology.
Original Abstract Submitted
according to an embodiment of the present invention, a semiconductor device includes a first region, a second region, a third region, and a gate region. the first region is of first conductive type and formed on a surface layer on one main surface side of the semiconductor substrate. the second region is of second conductive type and formed in a different region of the surface layer from the first region. the third region is formed between the first region and the second region on the surface layer, and has a predetermined impurity concentration distribution. the gate region is formed at one end of the third region through a gate oxide layer. the third region includes a first change region of the impurity concentration distribution corresponding to a position of the gate region.
