Kabushiki kaisha toshiba (20240313045). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takuya Yasutake of Kanazawa Ishikawa (JP)
Yasunobu Saito of Inagi Tokyo (JP)
Tsuyoshi Kachi of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313045 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple layers and electrodes, each serving a specific purpose in the device's operation.
- The device includes a first electrode, a second electrode, a first semiconductor layer, a third electrode, a second semiconductor layer, a third semiconductor layer, a fourth electrode, and a fourth semiconductor layer.
- The third semiconductor layer extends from the second semiconductor layer towards the first electrode side, positioned closer to the first electrode side than the lower surface of the second semiconductor layer.
- The third semiconductor layer is of the second conductivity type, while the fourth semiconductor layer is of the first conductivity type.
- The fourth electrode faces the second semiconductor layer through another portion of the insulating body and is electrically connected to the fourth semiconductor layer.
Potential Applications: - Power electronics - Semiconductor devices - Integrated circuits
Problems Solved: - Improved performance of semiconductor devices - Enhanced conductivity and efficiency
Benefits: - Higher efficiency in electronic devices - Better power management - Increased reliability and durability
Commercial Applications: Title: "Advanced Semiconductor Device for Enhanced Power Management" This technology can be used in various industries such as consumer electronics, automotive, and renewable energy sectors for improved power management and efficiency.
Questions about the technology: 1. How does the positioning of the third semiconductor layer contribute to the device's overall performance? 2. What are the specific advantages of having the fourth semiconductor layer of the first conductivity type in this device?
Original Abstract Submitted
a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a third electrode, a second semiconductor layer, a third semiconductor layer, a fourth electrode, and a fourth semiconductor layer. the third semiconductor layer extends from the second semiconductor layer toward the first electrode side. a lower end of the third semiconductor layer at the first electrode side is positioned further toward the first electrode side than the lower surface of the second semiconductor layer and is separated from the insulating body. the third semiconductor layer is of the second conductivity type. the fourth electrode faces the second semiconductor layer via an other portion of the insulating body. the fourth semiconductor layer is located between the second semiconductor layer and the second electrode and electrically connected with the second electrode. the fourth semiconductor layer is of the first conductivity type.
