Kabushiki kaisha toshiba (20240297220). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
Organization Name
Inventor(s)
Masatsugu Nagai of Nomi Ishikawa (JP)
Shingo Sato of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240297220 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
The semiconductor device described in the abstract includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. The semiconductor layer consists of first to third semiconductor regions, with the connection region positioned between the first electrode and the first semiconductor region. The connection region contains compounds of a first metallic element and Si, as well as a compound of Pt and Si. The first metallic element is chosen from Ti, V, Cr, Zr, Mo, Hf, Ta, and W. The connection region also includes a first part adjacent to an n-type region of the semiconductor layer in a specific direction.
- The semiconductor device features a unique connection region with compounds of specific metallic elements and Si, enhancing its performance.
- The positioning of the connection region between the first electrode and the first semiconductor region optimizes the device's functionality.
- The use of specific metallic elements like Ti, V, Cr, Zr, Mo, Hf, Ta, and W in the connection region contributes to the device's efficiency.
- The concentration distribution of the metallic elements and Pt in the connection region is carefully controlled for optimal performance.
- The device design ensures a peak position of concentration distribution that enhances the overall functionality of the semiconductor device.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring high performance and efficiency. - It may find applications in power electronics, telecommunications, and computing systems.
Problems Solved: - The device addresses the need for improved connectivity and performance in semiconductor devices. - It solves issues related to efficient energy transfer and signal processing in electronic systems.
Benefits: - Enhanced performance and efficiency in electronic devices. - Improved connectivity and signal processing capabilities. - Potential for increased energy efficiency in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device for High-Performance Electronics This technology could be commercially utilized in the development of high-performance electronic devices for various industries, including telecommunications, computing, and power electronics. The market implications include improved efficiency and performance in electronic systems, leading to enhanced consumer satisfaction and technological advancements.
Questions about the Semiconductor Device: 1. How does the specific composition of the connection region contribute to the device's performance? The specific composition of the connection region, including compounds of metallic elements like Ti, V, Cr, Zr, Mo, Hf, Ta, and W, enhances the device's conductivity and efficiency, leading to improved overall performance.
2. What role does the control electrode play in the functionality of the semiconductor device? The control electrode in the semiconductor device helps regulate the flow of current and signals within the device, ensuring precise operation and performance.
Original Abstract Submitted
a semiconductor device includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. the semiconductor layer includes first to third semiconductor regions. the connection region is positioned between the first electrode and the first semiconductor region. the connection region includes a compound of a first metallic element and si, and a compound of pt and si. the first metallic element is at least one selected from the group consisting of ti, v, cr, zr, mo, hf, ta, and w. the connection region includes a first part adjacent to an n-type region of the semiconductor layer in a first direction. a peak position of a concentration distribution of the first metallic element in the first direction of the first part is between the n-type region and a peak position of a concentration distribution of pt in the first direction of the first part.
