KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
Patent Applications by KABUSHIKI KAISHA TOSHIBA on September 19th, 2024
KABUSHIKI KAISHA TOSHIBA: 48 patent applications
KABUSHIKI KAISHA TOSHIBA has applied for patents in the areas of H01L29/78 (9), H01L29/40 (7), H01L29/06 (5), H01L29/16 (4), H01L29/66 (4) H01L29/7806 (2), H04L9/0852 (2), H01M4/485 (2), H01L29/7811 (2), A61K9/127 (1)
With keywords such as: semiconductor, electrode, region, surface, layer, portion, third, according, embodiment, and device in patent application abstracts.
Patent Applications by KABUSHIKI KAISHA TOSHIBA
Inventor(s): Emi NOZAKI of Shinagawa (JP) for kabushiki kaisha toshiba, Eiichi AKAHOSHI of Shinagawa (JP) for kabushiki kaisha toshiba, Mitsuko ISHIHARA of Setagaya (JP) for kabushiki kaisha toshiba
IPC Code(s): A61K9/127, A61K47/18, A61K47/22, C12N15/88
CPC Code(s): A61K9/127
Abstract: according to one embodiment, a lipid composition is for delivering an objective substance to a target cell. the composition is contacted with the target cell under an environment of 37� c. or higher. the composition includes a substance delivery carrier having lipid particle and an objective substance encapsulated in the lipid particle. the lipid particle constitutes a liposome and includes fft-10 and/or fft-20 as constituents thereof.
Inventor(s): Hitomi SAITO of Taito (JP) for kabushiki kaisha toshiba, Akiko SUZUKI of Ota (JP) for kabushiki kaisha toshiba, Yoshihiko NAKANO of Yokohama (JP) for kabushiki kaisha toshiba, Reiko YOSHIMURA of Kawasaki (JP) for kabushiki kaisha toshiba, Asato KONDO of Yokohama (JP) for kabushiki kaisha toshiba, Shinji MURAI of Sagamihara (JP) for kabushiki kaisha toshiba, Noriko TAKADA of Meguro (JP) for kabushiki kaisha toshiba
IPC Code(s): B01D53/14, B01D53/18, B01D53/62, B01D53/78, B01D53/96
CPC Code(s): B01D53/1493
Abstract: the present embodiments provide an acid gas absorbent, a method for removing an acid gas, and an acid gas removal apparatus. the acid gas absorbent comprises (a) a specific diamine compound, (b) amine compound and (c) a solvent, wherein a b/a ratio of a content rate of the component (b) to a content rate of the component (a) is 2.5 to 15.
Inventor(s): Ikki MATSUMOTO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): B24B29/02
CPC Code(s): B24B29/02
Abstract: a boron nitride plate surface treatment method according to an embodiment includes a first polishing process and a second polishing process. in the first polishing process, a surface of a boron nitride plate is polished by using a first polishing member having a grit within a range of not less than f120 and not more than f220 or within a range of not less than #240 and not more than #320. in the second polishing process, the surface of the boron nitride plate is polished by using a second polishing member having a grit within a range of not less than #360 and not more than #1000. the second polishing process is performed after the first polishing process. the boron nitride plate is suitable for a method for producing a silicon nitride substrate.
Inventor(s): Sayo YAMAMOTO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): B65G1/137, B65G1/06
CPC Code(s): B65G1/1373
Abstract: according to embodiments, the information processing apparatus includes an interface and a processor. the interface acquires warehousing information indicating articles to be stored in a rack. the rack includes two or more sections having different heights, and is to be carried by an automated guided vehicle. the processor acquires property information indicating property of each of the articles, and generates planning information indicating the sections to store the articles, based on the property information.
Inventor(s): Akiko SUZUKI of Ota (JP) for kabushiki kaisha toshiba, Yoshihiko NAKANO of Yokohama (JP) for kabushiki kaisha toshiba, Reiko YOSHIMURA of Kawasaki (JP) for kabushiki kaisha toshiba
IPC Code(s): C02F1/04, C02F1/54, C02F9/00
CPC Code(s): C02F1/042
Abstract: a water treatment system according to an embodiment includes an element that introduces treated water into a first container, an element that introduces an amine solution into the first container to obtain a first mixture, an element that separates a supernatant phase and a concentrated phase of a second mixture in which the first mixture is phase-separated. the amine solution includes one or more tertiary amine compounds represented by a chemical formula (1) or/and a chemical formula (2). rin the chemical formula (1) is a linear alkyl chain having 2 or more and 4 or less carbon atoms. rin the chemical formula (2) is a linear alkyl chain having 2 or more and 4 or less carbon atoms. rin the chemical formula (2) is a linear alkyl group having 1 or more and 4 or less carbon atoms or a branched alkyl group having 3 or 4 carbon atoms. rin the chemical formula (2) is a linear alkyl group having 1 or more and 4 or less carbon atoms or a branched alkyl group having 3 or 4 carbon atoms.
Inventor(s): Tomomi ANDO of Ota (JP) for kabushiki kaisha toshiba, Mitsuko ISHIHARA of Setagaya (JP) for kabushiki kaisha toshiba, Yoshitake SANO of Adachi (JP) for kabushiki kaisha toshiba
IPC Code(s): C12Q1/6886
CPC Code(s): C12Q1/6886
Abstract: according to one embodiment, method of identifying feature of test body is provided. the method includes measuring a mutation-specific concentration of at least one mirna contained in the test body, correcting a value of the mutation-specific concentration, and determining whether the test body is a cancer or a non-cancer one using an increase or decrease in the corrected mutation-specific concentration as index.
Inventor(s): Norihiro YOSHINAGA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Mutsuki YAMAZAKI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Keisuke SHIINO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Taishi FUKAZAWA of Chofu Tokyo (JP) for kabushiki kaisha toshiba, Yoshihiko NAKANO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Koji MIZUGUCHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yoshitsune SUGANO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Masahiko YOSHIKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Asato KONDO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Mitsuhiro OKI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): C25B11/053, C25B9/23, C25B9/77, C25B11/031, C25B11/056, C25B11/063, C25B11/093
CPC Code(s): C25B11/053
Abstract: an electrode of an embodiment includes a porous titanium support and a catalyst layer for electrolysis provided on the porous titanium support and stacked sheet layers and gap layers alternately. a first covering layer including titanium oxide is provided on the porous titanium support on the catalyst layer side. a second covering layer including titanium oxide is provided on the porous titanium support on an opposite side of the catalyst layer. an average thickness of the first covering layer is denoted as d1. an average thickness of the second covering layer is denoted as d2. d1 and d2 satisfies 1 [nm]≤d2−d1≤20 [nm].
Inventor(s): Dean KOS of Ota Tokyo (JP) for kabushiki kaisha toshiba, Yasushi Shinjo of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Isao Takasu of Setagaya Tokyo (JP) for kabushiki kaisha toshiba, Kohei Nakayama of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Akiko Hirao of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01N33/00, G01N27/407
CPC Code(s): G01N33/0011
Abstract: a gas detection system includes: a gas detector that detects a first analyte in a first sample gas to generate a first detection signal; a signal generator that generates a first reference signal corresponding to the first analyte; a signal processor that performs first signal processing using the first detection signal and the first reference signal, to thereby generate a first processed signal; and a gas controller that varies the concentration of the first analyte in the first sample gas with time based on the first reference signal so as to make the first detection signal synchronize with the first reference signal.
20240310404. SENSOR AND ELECTRONIC DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kei MASUNISHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Etsuji OGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasushi TOMIZAWA of Fuchu Tokyo (JP) for kabushiki kaisha toshiba, Fumito MIYAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Daiki ONO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Kengo UCHIDA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Jumpei OGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Fumitaka ISHIBASHI of Sumida Tokyo (JP) for kabushiki kaisha toshiba, Hideaki MURASE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01P15/08
CPC Code(s): G01P15/08
Abstract: according to one embodiment, a sensor includes a first beam, a first opposing beam, a support portion, a first linking portion, and a first connecting portion. the first beam includes a first portion and a first other portion. a direction from the first portion to the first other portion is along a first direction. a second direction from the first opposing beam to the first beam crosses the first direction. the first opposing beam includes a first opposing portion and a first other opposing portion. the first linking portion is connected to the first other portion and the first other opposing portion. the first connecting portion is connected to the first linking portion. a first connecting portion width along the second direction of the first connecting portion is narrower than a first linking portion width along the second direction of the first linking portion.
20240310406. SENSOR AND ELECTRONIC DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kei MASUNISHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Etsuji OGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasushi TOMIZAWA of Fuchu Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G01P15/097, G01P15/125
CPC Code(s): G01P15/097
Abstract: according to one embodiment, a sensor includes an element section. the element section includes a first beam, a first beam electrode, a second beam, and a second beam electrode. the first beam includes a first portion, a first other portion, and a first intermediate portion between the first portion and the first other portion. the first beam electrode is connected to the first intermediate portion. the second beam includes a second portion, a second other portion, and a second intermediate portion between the second portion and the second other portion. the second beam electrode is connected to the second intermediate portion. the first and the second beam electrodes satisfy at least one of first to eighth conditions.
Inventor(s): Kenichirou OGAWA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Shunsuke ISHIZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Tetsu SHIJO of Setagaya Tokyo (JP) for kabushiki kaisha toshiba, Yasuhiro KANEKIYO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01R31/34, G08B21/18
CPC Code(s): G01R31/343
Abstract: a spark discharge monitoring system includes a receiving unit, a control unit, and a display unit. the receiving unit receives spark information. the control unit acquires a temporal change of the spark number based on the spark information, corrects the spark number based on operation data including at least a field current, and displays the temporal change of the corrected spark number on the display unit.
Inventor(s): Kakuya UEDA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yoshiaki MURATA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasunobu YAMASHITA of Meguro Tokyo (JP) for kabushiki kaisha toshiba, Taro FUKAYA of Setagaya Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G01R31/385, B65D81/18, G01R31/36, G01R31/367, H02J7/00
CPC Code(s): G01R31/386
Abstract: a secondary battery diagnosis method rapidly charges a secondary battery at a low temperature and stores the secondary battery in a range of 45� c. or higher and 70� c. or lower for a predetermined period. the method determines a degree of voltage drop of the secondary battery between before and after storing the secondary battery. the secondary battery includes a negative electrode in which an active material having an average operating potential of 1.0 vvsli/li or more occupies 50% by weight or more of a negative electrode active material-containing layer.
20240311026. MAGNETIC DISK DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Ling LIN of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Tatsuya HAGA of Fujisawa Kanagawa (JP) for kabushiki kaisha toshiba, Tatsuo NITTA of Machida Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G06F3/06
CPC Code(s): G06F3/064
Abstract: according to one embodiment, a magnetic disk device includes a plurality of magnetic disks including a first recording surface and a second recording surface, a first magnetic head that writes data to the first recording surface, a second magnetic head that writes data to the second recording surface and a controller that includes a counter configured to detect the number of writes of each of the first magnetic head and the second magnetic head, an unwritten detection unit configured to detect an unwritten block from the blocks, and a memory configured to store a first threshold for the number of writes of each of the first magnetic head and the second magnetic head and a second threshold less than or equal to the first threshold.
Inventor(s): Takeichiro NISHIKAWA of Yokohama (JP) for kabushiki kaisha toshiba, Gen LI of Kawasaki (JP) for kabushiki kaisha toshiba
IPC Code(s): G06N3/08
CPC Code(s): G06N3/08
Abstract: according to an embodiment, an information processing device includes one or more hardware processors configured to: set an error function including one or more terms based on a plurality of weights according to features of a plurality of elements, the error function being a function used during learning of a machine learning model into which positions of a plurality of atoms included in an analysis target, and information indicating which of the plurality of elements the plurality of atoms are, are input, and that outputs a physical quantity of the analysis target; and learn the machine learning model using the error function.
Inventor(s): Kenji HIROHATA of Tokyo (JP) for kabushiki kaisha toshiba, Makihiko ISHITANI of Kawasaki (JP) for kabushiki kaisha toshiba, Shotaro OKA of Tokyo (JP) for kabushiki kaisha toshiba, Akira KANO of Kawasaki (JP) for kabushiki kaisha toshiba, Hideaki UEHARA of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): G06Q20/40, G06Q20/38
CPC Code(s): G06Q20/4016
Abstract: according to one embodiment, a model utilization system includes a memory and one or more processors. the one or more processors are configured to: perform processing of a distributed ledger configured to store a scenario to be used for analysis of a target system, a digital twin model to be used for the analysis, and data to be input to the digital twin model; calculate a token for an organization that provides the digital twin model to be utilized and an organization that provides the data to be utilized; retrieve, from the distributed ledger, a candidate of the scenario satisfying a user request, a candidate of the digital twin model satisfying the user request, and a candidate of the data satisfying the user request, present the retrieved candidates, and present a token required to use a combination of the retrieved candidates of the digital twin model and the data.
Inventor(s): Masayuki KONDO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/008, G11B5/49, G11B5/58, G11B5/596
CPC Code(s): G11B5/00821
Abstract: according to one embodiment, a magnetic disk device which supplies, at the time of startup of data write or startup of data read, electric power higher than steady electric power used to make, in advance, spacing between a magnetic disk and a magnetic head become saturated at a target value to a heater of the magnetic head for a specified time and, after an elapse of the specified time, gradually reduces the electric power to be supplied to the heater of the magnetic head to the steady electric power.
20240312480. DISK DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Manabu UEHARA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/012, G11B5/02, G11B5/105, G11B5/48
CPC Code(s): G11B5/012
Abstract: according to one embodiment, a disk device includes a magnetic disk, a suspension, a magnetic head, and a carriage. the magnetic disk rotates about a first rotation axis. the suspension includes a base plate, a load beam, and a flexure. the magnetic head is attached to the flexure and configured to read and write information from and to the magnetic disk. the carriage includes an arm to which the base plate is attached. the carriage rotates about a second rotation axis to move the magnetic head with respect to the magnetic disk. the base plate includes a first surface and a second surface. the first surface faces the magnetic disk when the magnetic head is located on the magnetic disk. the second surface is opposite the first surface and faces the arm. a component different from the arm is disposed on the second surface.
Inventor(s): Nobuhiro MAETO of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/09, G11B5/012, G11B5/55, G11B5/56, G11B5/596
CPC Code(s): G11B5/09
Abstract: according to one embodiment, a magnetic disk device includes a disk, a head configured to write data to the disk and read the data from the disk, and a controller configured to control write processing based on a first determination value corresponding to a first shift amount defined for the excessive number of times at which the first shift amount of the head in a radial direction of the disk exceeds a first threshold value causing a read error in a second track adjacent to a first track in the radial direction at a time of the write processing of the first track of the disk, and a second threshold value changing the write processing.
20240312485. MAGNETIC DISK DEVICE AND METHOD_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Hitoshi HASEGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hiroyuki TAKEDA of Ome Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B20/18
CPC Code(s): G11B20/1889
Abstract: according to an embodiment, upon a failure in detection of a servo mark from servo data recorded in a first normal servo sector in a write operation, a controller of a magnetic disk device stops a write operation. then, the controller demodulates the servo data including the servo mark, for the servo data recorded in a first short servo sector being a short servo sector immediately before the first normal servo sector, and resumes the write operation from a data area immediately after the first normal servo sector.
20240312490. DISK APPARATUS_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Masaki MORITA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hisashi HASEGAWA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B33/08, G11B33/14
CPC Code(s): G11B33/08
Abstract: a disk apparatus includes a housing including a base, the base including a bottom wall and a frame-like side wall standing upright along peripheral edges of the bottom wall, and a top cover joined to the base, a rotatable disk-shaped recording medium disposed in the housing, a protective cover including a top plate secured to the top cover and a side plate facing one side surface of the base, and a shock absorber sandwiched between the side plate and the one side surface of the base.
Inventor(s): Rei KIMURA of Setagaya (JP) for kabushiki kaisha toshiba, Kazuhito ASANO of Ota (JP) for kabushiki kaisha toshiba
IPC Code(s): G21C5/12, G21C3/52, G21C7/26, G21C15/247
CPC Code(s): G21C5/12
Abstract: a nuclear reactor comprising: a moderator including a metal hydride; and a nuclear fuel in which europium is added as an additive to a main nuclear fuel material. thus, the nuclear reactor can be kept in the subcritical state even under the state where all the control devices are pulled out before startup.
Inventor(s): Yosuke KAJIWARA of Yokohama (JP) for kabushiki kaisha toshiba, Masahiko KURAGUCHI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L21/02, H01L29/04, H01L29/20, H01L29/40
CPC Code(s): H01L21/02458
Abstract: according to one embodiment, a semiconductor device includes a first transistor, and a first mounting member. the first transistor includes a nitride semiconductor layer and includes a first element electrode, a second element electrode, and a third element electrode. the first mounting member includes a first frame electrode, a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, a first pad electrode, and a first pad connection member electrically connecting the first element electrode and the first pad electrode.
Inventor(s): Daisuke KOIKE of Tama Tokyo (JP) for kabushiki kaisha toshiba, Hisashi TOMITA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yuning TSAI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yutaro HAYASHI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/367, H01L23/00, H01L23/373, H01L29/739
CPC Code(s): H01L23/367
Abstract: a semiconductor device according to an embodiment includes: a semiconductor chip; a conductive sheet provided on the semiconductor chip; and a metal plate provided on the conductive sheet. the metal plate has a step portion that is provided on a lateral surface, or a groove portion that is provided on a bottom surface.
20240312875. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Rie ARIMA of Komatsu Ishikawa (JP) for kabushiki kaisha toshiba, Kazuki MATSUO of Nonoichi Ishikawa (JP) for kabushiki kaisha toshiba, Masaru IZUMISAWA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/482, H01L23/00, H01L23/495
CPC Code(s): H01L23/482
Abstract: according to one embodiment, a semiconductor device includes a metal base, a terminal separated from the metal base, a semiconductor chip including a back-surface-side electrode connected to the metal base and a front-surface-side electrode provided on a front surface opposite to the back-surface-side electrode, a connection member including a first end portion connected to the front-surface-side electrode of the semiconductor chip and a second end portion connected to the terminal, and a conductive member provided on the front-surface-side electrode of the semiconductor chip and covering a region of the front-surface-side electrode that is not connected to the first end portion of the connection member.
20240312947. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Tomohiro IGUCHI of Himeji Hyogo (JP) for kabushiki kaisha toshiba, Tatsuya HIRAKAWA of Takasago Hyogo (JP) for kabushiki kaisha toshiba, Shogo MINAMI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroyuki MATSUO of Nerima Tokyo (JP) for kabushiki kaisha toshiba, Izuru KOMATSU of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/00, H01L23/498, H01L25/07
CPC Code(s): H01L24/48
Abstract: a semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer; a semiconductor chip on the first metal layer having an upper electrode and a lower electrode connected to the first metal layer; a bonding wire having a first end portion connected to the upper electrode and a second end portion connected to the second metal layer; a first resin layer covering the semiconductor chip and the bonding wire, the first resin layer containing a first resin; a second resin layer covering a bonding portion between the first end portion and the upper electrode containing a second resin having a young's modulus higher than that of the first resin; a third resin layer on the first resin layer, the third resin layer containing a third resin having a moisture permeability lower than that of the first resin.
20240312960. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Shun TAKEDA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroshi KONO of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L25/07, H01L23/00, H01L23/498
CPC Code(s): H01L25/072
Abstract: according to one embodiment, a semiconductor device includes a plurality of chips, in which the plurality of chips include a first chip, a second chip adjacent to the first chip on the other end side in the first direction, a third chip closer to the other end side in the first direction than the second chip, and a fourth chip adjacent to the third chip on the other end side in the first direction, which are arranged from one end side to the other end side in a first direction, and a first distance between the first chip and the second chip, and a second distance between the third chip and the fourth chip are less than a third distance between, among the plurality of chips, two chips adjacent to each other in a region closer to the other end side in the first direction than the first chip and closer to the one end side in the first direction than the fourth chip.
20240313045. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Takuya YASUTAKE of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba, Yasunobu SAITO of Inagi Tokyo (JP) for kabushiki kaisha toshiba, Tsuyoshi KACHI of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/06, H01L29/40, H01L29/417, H01L29/78
CPC Code(s): H01L29/0607
Abstract: a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a third electrode, a second semiconductor layer, a third semiconductor layer, a fourth electrode, and a fourth semiconductor layer. the third semiconductor layer extends from the second semiconductor layer toward the first electrode side. a lower end of the third semiconductor layer at the first electrode side is positioned further toward the first electrode side than the lower surface of the second semiconductor layer and is separated from the insulating body. the third semiconductor layer is of the second conductivity type. the fourth electrode faces the second semiconductor layer via an other portion of the insulating body. the fourth semiconductor layer is located between the second semiconductor layer and the second electrode and electrically connected with the second electrode. the fourth semiconductor layer is of the first conductivity type.
Inventor(s): Hirofumi NAGANO of Fujisawa, Kanagawa (JP) for kabushiki kaisha toshiba, Kumiko SATO of Kanazawa, Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/10, H01L29/40, H01L29/78
CPC Code(s): H01L29/1045
Abstract: according to an embodiment of the present invention, a semiconductor device includes a first region, a second region, a third region, and a gate region. the first region is of first conductive type and formed on a surface layer on one main surface side of the semiconductor substrate. the second region is of second conductive type and formed in a different region of the surface layer from the first region. the third region is formed between the first region and the second region on the surface layer, and has a predetermined impurity concentration distribution. the gate region is formed at one end of the third region through a gate oxide layer. the third region includes a first change region of the impurity concentration distribution corresponding to a position of the gate region.
Inventor(s): Tatsuo SHIMIZU of Shinagawa Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/66, H01L21/04, H01L29/16, H01L29/78
CPC Code(s): H01L29/66068
Abstract: a semiconductor device manufacturing method of embodiments includes: performing first ion implantation for implanting aluminum into a silicon carbide layer with a first dose amount; performing first heat treatment at a temperature equal to or more than 1600� c.; performing first etching process for etching a surface of the silicon carbide layer in an atmosphere containing plasma generated from a gas containing halogen and oxygen; performing second etching process for etching the surface in an atmosphere containing hydrogen plasma or atomic hydrogen; forming a silicon oxide film on the surface; and forming a gate electrode on the silicon oxide film.
20240313093. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Hiroki HATADA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/739, H01L29/36, H01L29/423
CPC Code(s): H01L29/7397
Abstract: a semiconductor device according to an embodiment includes: a first semiconductor region of a first conductivity type disposed; a second semiconductor region of a second conductivity type disposed on the first region; a third semiconductor region of the first conductivity type disposed on the second region; an insulating film disposed in the first, second and third regions; and a second electrode disposed in the insulating film so as to be adjacent to the second region via the insulating film. the second region includes a boundary region that is in contact with the insulating film and faces the second electrode, the boundary region includes a high-concentration region, the insulating film includes a first region in contact with the high-concentration region and a second region in contact with a low-concentration region, and a thickness of the second region is smaller than a thickness of the first region.
Inventor(s): Daimotsu KATO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yosuke KAJIWARA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroshi ONO of Setagaya Tokyo (JP) for kabushiki kaisha toshiba, Aya SHINDOME of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Ikuo FUJIWARA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Masahiko KURAGUCHI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Tatsuo SHIMIZU of Shinagawa Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/778, H01L29/20, H01L29/36
CPC Code(s): H01L29/7786
Abstract: according to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. the first semiconductor region includes algan (0≤x1<1). the second semiconductor region including algan (0<x2<1, x1<x2). the first nitride region includes algan (0<z1≤1, x2<z1). the first nitride region includes a first nitride portion. the first nitride portion includes a first position. the first position is a center of the first nitride portion. the third partial region of the first semiconductor region includes a first face facing the first nitride portion. a chlorine concentration at the first position is lower than a chlorine concentration at the first face.
20240313104. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Masaru FURUKAWA of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L29/06, H01L29/10, H01L29/16
CPC Code(s): H01L29/7802
Abstract: a semiconductor device according to an embodiment includes a silicon carbide layer having a first face and a second face; a first silicon carbide region of a first conductivity type; a second silicon carbide region of a second conductivity type; a third silicon carbide region of the first conductivity type in the silicon carbide layer in this order in a direction from the second face to the first face; and a gate electrode. the first silicon carbide region includes a first region, second regions, and third regions. the second regions and the third regions are provided between the first region and the second silicon carbide region. the second regions and the third regions are alternately provided in a first direction parallel to the first face, and the first conductivity type impurity concentration of the second regions is higher than those of the first region and the third regions.
20240313106. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kouta TOMITA of Nonoichi Ishikawa (JP) for kabushiki kaisha toshiba, Tatsuya NISHIWAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L29/40, H01L29/66
CPC Code(s): H01L29/7806
Abstract: a semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.
20240313107. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Shunsuke ASABA of Himeji Hyogo (JP) for kabushiki kaisha toshiba, Hiroshi KONO of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L29/06, H01L29/16
CPC Code(s): H01L29/7806
Abstract: a semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode and being of a first conductivity type, second semiconductor layers located on a portion of the first semiconductor layer and being of a second conductivity type, a third semiconductor layer located on a portion of the second semiconductor layer and being of the first conductivity type, a fourth semiconductor layer located in a portion of the first semiconductor layer between the second semiconductor layers and being of the second conductivity type, a second electrode facing the second semiconductor layer via an insulating film, and a third electrode connected to the second and third semiconductor layers. the first, second, third, and fourth semiconductor layers include silicon and carbon.
20240313108. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Katsuhisa TANAKA of Himeji Hyogo (JP) for kabushiki kaisha toshiba, Hiroshi KONO of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L21/04, H01L29/06, H01L29/16, H01L29/40, H01L29/66
CPC Code(s): H01L29/7811
Abstract: a silicon carbide layer includes a first surface, a second surface, a third surface positioned at a side opposite to the first and second surfaces in a first direction, and a side surface. the second surface is at a position recessed further toward the third surface side than the first surface. an inter-layer insulating film is located on the second surface. a thickness of the inter-layer insulating film is greater than a difference in heights in the first direction between the first surface and the second surface. a field plate is located in the inter-layer insulating film. the field plate has a lower resistivity than the inter-layer insulating film.
20240313109. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Katsuhisa TANAKA of Himeji Hyogo (JP) for kabushiki kaisha toshiba, Hiroshi KONO of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L29/06, H01L29/40
CPC Code(s): H01L29/7811
Abstract: according to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the second conductivity type, a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the second conductivity type, an eighth semiconductor region of the second conductivity type, a second electrode, and a third electrode. the fourth semiconductor region is located around the second semiconductor region and the gate electrode. the fourth, fifth and sixth semiconductor regions are separated from each other. the fourth, seventh and eighth semiconductor regions are separated from each other. the third electrode is located on the eighth semiconductor region with an insulating layer interposed.
20240313110. SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Tsuyoshi KACHI of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/78, H01L29/40, H01L29/417
CPC Code(s): H01L29/7813
Abstract: a semiconductor device includes a first electrode, a semiconductor part located on the first electrode, an insulating film located on the semiconductor part, a second electrode located on the insulating film, a third electrode located on the insulating film, an insulating body located in the semiconductor part, a first conductive member located in the semiconductor part with the insulating body interposed, a second conductive member located in the insulating body, and a third conductive member located in the semiconductor part. the first conductive member is connected to the third electrode. the second conductive member is connected to the second electrode. the third conductive member extends in a first direction from a region directly under the second electrode to at least a region directly under the third electrode. the third conductive member is connected to the semiconductor part and the second electrode.
Inventor(s): Kazushiro NOMURA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kenichi OHASHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Soichi YAMASHITA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kentaro MORI of Fujisawa Kanagawa (JP) for kabushiki kaisha toshiba, Aya MURAYOSHI of Ichihara Chiba (JP) for kabushiki kaisha toshiba, Hiroki OKUYAMA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/786, H01L21/683, H01L21/8234, H01L29/417, H01L29/66
CPC Code(s): H01L29/78642
Abstract: a semiconductor device according to an embodiment includes a first electrode having a first main surface and a second main surface opposite to the first main surface, a semiconductor substrate disposed on the second main surface, and a second electrode disposed on a fourth main surface of the semiconductor substrate opposite to a third main surface in contact with the first electrode. the first electrode has a first side surface substantially perpendicularly intersecting with the first main surface, and a second side surface substantially perpendicularly intersecting with both the first main surface and the first side surface, and the first main surface, the first side surface, and the second side surface are connected to each other via a curved surface.
Inventor(s): Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Yasunobu YAMASHITA of Tokyo (JP) for kabushiki kaisha toshiba, Kakuya UEDA of Kawasaki (JP) for kabushiki kaisha toshiba, Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/485, H01M50/204
CPC Code(s): H01M4/485
Abstract: according to one embodiment, an active material including a niobium-titanium oxide phase having a monoclinic structure is provided. the niobium-titanium oxide phase has a crystal structure that includes in a crystal lattice thereof, at least one per unit lattice of a (nb, ti) ooctahedron site composed only with vertex-sharing, a bond angle distortion in the octahedron site being 0.8 �/degor less. a crystallite diameter of the niobium-titanium oxide phase is in a range from 85 nm or greater to 130 nm or less.
Inventor(s): Yumi FUKUDA of Tokyo (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Keigo HOSHINA of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/485, B60L3/00, H01M10/42, H01M50/204, H01M50/296
CPC Code(s): H01M4/485
Abstract: according to one embodiment, an active material is provided. the active material includes a mo-containing niobium-titanium oxide having a monoclinic structure. a ratio i/iof an intensity iof a second peak appearing within a range of 2� from 25.0� to 25.5� relative to an intensity iof a first peak appearing within a range of 2� from 23.5� to 24.5� is 0.5 or greater, according to x-ray diffraction spectroscopy for the active material.
Inventor(s): Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Yasunobu YAMASHITA of Tokyo (JP) for kabushiki kaisha toshiba, Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/62
CPC Code(s): H01M4/622
Abstract: according to one embodiment, provided is an electrode slurry including carboxymethyl cellulose and niobium oxide particles. a degree of etherification of the carboxymethyl cellulose is 0.6 or more and 1.0 or less. a contact angle with water according to a permeation rate method of the niobium oxide particles is 83� or more.
Inventor(s): Takahiro ONO of Tokyo (JP) for kabushiki kaisha toshiba, Masato YOSHINO of Yokohama (JP) for kabushiki kaisha toshiba, Kentaro MATSUNAGA of Tokyo (JP) for kabushiki kaisha toshiba, Norikazu OSADA of Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M8/04746, H01M8/026, H01M8/12, H01M8/1246, H01M8/24
CPC Code(s): H01M8/04746
Abstract: according to one embodiment, an electrochemical cell includes: an electrode layered body having an electrolyte having a first surface and a second surface positioned opposite to the first surface , a cathode in contact with the first surface , and an anode in contact with the second surface ; and a gas-flow suppression part that is positioned at least partially adjacent to a side surface of the electrode layered body , and is formed from a material different from those of the electrolyte , the cathode , and the anode
Inventor(s): Daisuke TAKEDA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kenji MITSUMOTO of Setagaya Tokyo (JP) for kabushiki kaisha toshiba, Koji SASAKI of Inagi Tokyo (JP) for kabushiki kaisha toshiba, Koji TOBA of Tama Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H02J3/00, H02J9/06, H02J13/00
CPC Code(s): H02J3/0012
Abstract: an energy management system is disclosed. in the system, a mode identification unit identifies whether a microgrid is in a grid connection mode or in an isolated operation mode. a prediction unit predicts, during the grid connection mode, an amount of demand for electric power in the microgrid and an output amount of renewable energy. the prediction is performed for a case where the grid connection mode is continued and for a case where the grid connection mode is switched to the isolated operation mode. a planning unit creates a facility operation plan for the microgrid to be applied to the grid connection mode and the isolated operation mode. a display i/f unit displays, on a display device in the grid connection mode, operation information representing operation of the microgrid during the isolated operation mode.
Inventor(s): Tetsu SHIJO of Setagaya Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H02J7/00, H02J3/32
CPC Code(s): H02J7/00712
Abstract: according to one embodiment, an electric power system includes an electrical storage device electrically connected to an electric power system; and a controller configured to control the electrical storage device based on an electric power command from an upper control system configured to control input-output electric power of the electrical storage device, and make a transition to an autonomous mode in which the input-output electric power of the electrical storage device is controlled based on a charge remaining amount of the electrical storage device, in at least one of a case where the controller senses that communication with the upper control system fails or a case where the controller senses that the electrical storage device and the electric power system is disconnected.
20240313720. AMPLIFIER CIRCUIT AND SYSTEM_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Akira YAMAUCHI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroshi YOSHINO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H03F3/45, H03F1/02
CPC Code(s): H03F3/45183
Abstract: a first circuit outputs first and second currents having different magnitudes. a second circuit receives the first current and first and second voltages, and outputs third and fourth currents based on the first and second voltages. a third circuit receives the second current and the first and second voltages, and outputs fifth and sixth currents based on the first and second voltages. a fourth circuit outputs an eighth current having a magnitude of the magnitude of the third current without a magnitude of a seventh current, which is a sum of the fifth and sixth currents, and a ninth current having a magnitude of the magnitude of the fourth current without the magnitude of the seventh current. a fifth circuit receives the eighth and ninth currents, outputs tenth and eleventh currents based on the eighth and ninth currents to a first end.
Inventor(s): Akira MURAKAMI of Tama Tokyo (JP) for kabushiki kaisha toshiba, Yoshimichi TANIZAWA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H04L9/08
CPC Code(s): H04L9/0852
Abstract: according to one embodiment, a control device includes one or more processors and an output circuitry. the one or more processors are configured to acquire, via a quantum communication path, information indicating a state of quantum communication from a plurality of reception devices that receive photons, and determine resources to be allocated to a plurality of key distillation modules of a server device based on the information indicating the state of quantum communication. the output circuitry is configured to output resource information indicating the resources to be allocated to the plurality of key distillation modules to the server device.
[[20240313955. KEY MANAGER, QUANTUM CRYPTOGRAPHIC COMMUNICATION SYSTEM, QKDN CONTROL DEVICE, INFORMATION PROCESSING DEVICE, KEY MANAGEMENT METHOD, QKDN CONTROL METHOD, INFORMATION PROCESSING METHOD, AND PROGRAM PRODUCT_simplified_abstract_(kabushiki kaisha toshiba)]]
Inventor(s): Yu YU of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yoshimichi TANIZAWA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H04L9/08
CPC Code(s): H04L9/0852
Abstract: a key manager according to one embodiment is connected to a qkd device generating a link key by qkd. the key manager includes a communication interface and a processor. the communication interface receives, from a source application of a user network, information for identifying the source application, information for identifying a destination application, and a requested amount of an application key used for encrypting or decrypting communication in the user network. the processor identifies a key manager as a sharing destination of the application key and determines a sharing amount. the processor causes the communication interface to transmit the application key to the key manager as the sharing destination. the application key to be transmitted has been encrypted by using the link key and satisfies the sharing amount. the processor causes the communication interface to transmit the application key of the requested amount to the source application.
20240314264. IMAGE SENSOR AND IMAGE SENSOR MODULE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Tomotake HASUO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H04N5/268, H04N23/667
CPC Code(s): H04N5/268
Abstract: an image sensor is provided in a semiconductor chip and includes an image capturing circuit configured to output an image signal representing an image, a plurality of output terminals that are electrically connected to the image capturing circuit, and a switching circuit electrically connected between the image capturing circuit and the plurality of output terminals, the switching circuit being controlled to output the image signal output from the image capturing circuit through one of the output terminals, based on a mode indication signal indicating an output mode of the image sensor.
KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- KABUSHIKI KAISHA TOSHIBA
- A61K9/127
- A61K47/18
- A61K47/22
- C12N15/88
- CPC A61K9/127
- Kabushiki kaisha toshiba
- B01D53/14
- B01D53/18
- B01D53/62
- B01D53/78
- B01D53/96
- CPC B01D53/1493
- B24B29/02
- CPC B24B29/02
- B65G1/137
- B65G1/06
- CPC B65G1/1373
- C02F1/04
- C02F1/54
- C02F9/00
- CPC C02F1/042
- C12Q1/6886
- CPC C12Q1/6886
- C25B11/053
- C25B9/23
- C25B9/77
- C25B11/031
- C25B11/056
- C25B11/063
- C25B11/093
- CPC C25B11/053
- G01N33/00
- G01N27/407
- CPC G01N33/0011
- G01P15/08
- CPC G01P15/08
- G01P15/097
- G01P15/125
- CPC G01P15/097
- G01R31/34
- G08B21/18
- CPC G01R31/343
- G01R31/385
- B65D81/18
- G01R31/36
- G01R31/367
- H02J7/00
- CPC G01R31/386
- G06F3/06
- CPC G06F3/064
- G06N3/08
- CPC G06N3/08
- G06Q20/40
- G06Q20/38
- CPC G06Q20/4016
- G11B5/008
- G11B5/49
- G11B5/58
- G11B5/596
- CPC G11B5/00821
- G11B5/012
- G11B5/02
- G11B5/105
- G11B5/48
- CPC G11B5/012
- G11B5/09
- G11B5/55
- G11B5/56
- CPC G11B5/09
- G11B20/18
- CPC G11B20/1889
- G11B33/08
- G11B33/14
- CPC G11B33/08
- G21C5/12
- G21C3/52
- G21C7/26
- G21C15/247
- CPC G21C5/12
- H01L21/02
- H01L29/04
- H01L29/20
- H01L29/40
- CPC H01L21/02458
- H01L23/367
- H01L23/00
- H01L23/373
- H01L29/739
- CPC H01L23/367
- H01L23/482
- H01L23/495
- CPC H01L23/482
- H01L23/498
- H01L25/07
- CPC H01L24/48
- CPC H01L25/072
- H01L29/06
- H01L29/417
- H01L29/78
- CPC H01L29/0607
- H01L29/10
- CPC H01L29/1045
- H01L29/66
- H01L21/04
- H01L29/16
- CPC H01L29/66068
- H01L29/36
- H01L29/423
- CPC H01L29/7397
- H01L29/778
- CPC H01L29/7786
- CPC H01L29/7802
- CPC H01L29/7806
- CPC H01L29/7811
- CPC H01L29/7813
- H01L29/786
- H01L21/683
- H01L21/8234
- CPC H01L29/78642
- H01M4/485
- H01M50/204
- CPC H01M4/485
- B60L3/00
- H01M10/42
- H01M50/296
- H01M4/62
- CPC H01M4/622
- H01M8/04746
- H01M8/026
- H01M8/12
- H01M8/1246
- H01M8/24
- CPC H01M8/04746
- H02J3/00
- H02J9/06
- H02J13/00
- CPC H02J3/0012
- H02J3/32
- CPC H02J7/00712
- H03F3/45
- H03F1/02
- CPC H03F3/45183
- H04L9/08
- CPC H04L9/0852
- H04N5/268
- H04N23/667
- CPC H04N5/268
