Japan display inc. (20240258416). TRANSISTOR simplified abstract
Contents
TRANSISTOR
Organization Name
Inventor(s)
Masumi Nishimura of Tokyo (JP)
TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258416 titled 'TRANSISTOR
The abstract of this patent application describes a transistor with a unique structure involving an amorphous substrate, a conductive alignment layer, a heterojunction structure with a semiconductor layer and a polarization layer, and a gate electrode.
- The transistor includes an amorphous substrate.
- It has a conductive alignment layer over the substrate.
- The heterojunction structure consists of a semiconductor layer and a polarization layer.
- The gate electrode is positioned over the heterojunction structure.
- There is a recessed portion in a region overlapping the gate electrode.
Potential Applications: - This technology could be used in electronic devices such as smartphones, computers, and sensors. - It may find applications in power electronics and renewable energy systems.
Problems Solved: - Provides a more efficient and reliable transistor design. - Enhances the performance of electronic devices.
Benefits: - Improved functionality and performance of electronic devices. - Increased efficiency and reliability of transistors.
Commercial Applications: Title: Advanced Transistor Technology for Enhanced Electronic Devices This technology could revolutionize the electronics industry by improving the performance and efficiency of various electronic devices, leading to better consumer experiences and potentially opening up new markets for innovative products.
Questions about the technology: 1. How does this transistor design compare to traditional transistor structures? 2. What are the potential challenges in implementing this technology on a large scale?
Original Abstract Submitted
a transistor according to an embodiment of the present invention includes an amorphous substrate, a conductive alignment layer over the amorphous substrate, a heterojunction structure including a semiconductor layer and a polarization layer in contact with the semiconductor layer over the conductive alignment layer, and a gate electrode over the heterojunction structure. the heterojunction structure comprises a recessed portion in a region overlapping the gate electrode. the recessed portion may be provided in the polarization layer or the semiconductor layer.
