Japan display inc. (20240258331). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258331 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple layers and electrodes, including gate electrodes, insulating layers, oxide semiconductor layers, and connecting electrodes.
- The device features a first gate electrode, a first gate insulating layer, a first oxide semiconductor layer, source and drain electrodes, a second gate insulating layer, a second oxide semiconductor layer, and a second gate electrode.
- A first insulating layer with a first aperture overlaps with the second oxide semiconductor layer in a planar view.
- A first connecting electrode electrically connects the first gate electrode and the second gate electrode via the first aperture.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring precise control of electrical currents.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in modern electronic devices.
Benefits: - Improved performance and reliability in electronic circuits. - Enhanced control over electrical currents in semiconductor devices.
Commercial Applications: - This technology could be utilized in the production of advanced electronic devices such as smartphones, tablets, and computers.
Questions about the technology: 1. How does the design of this semiconductor device contribute to its overall performance?
- The multiple layers and electrodes in the device work together to enhance its functionality and efficiency.
2. What sets this semiconductor device apart from traditional designs?
- The unique configuration of layers and electrodes in this device allows for improved control and performance in electronic applications.
Original Abstract Submitted
a semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.
