International business machines corporation (20240321630). TOP VIA INTERCONNECT simplified abstract

TOP VIA INTERCONNECT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Christopher J. Waskiewicz of Rexford NY (US)

Chih-Chao Yang of Glenmont NY (US)

Huai Huang of Clifton Park NY (US)

Koichi Motoyama of Clifton Park NY (US)

Julien Frougier of Albany NY (US)

TOP VIA INTERCONNECT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321630 titled 'TOP VIA INTERCONNECT

The semiconductor structure described in the abstract consists of first metal lines embedded in a first dielectric layer, second metal lines embedded in a second dielectric layer, with the second metal lines arranged above the first metal lines. A top via extends between one of the first metal lines and one of the second metal lines, with the top via being self-aligned to the one of the first metal lines. Additionally, at least one air gap is located adjacent to the top via between the first metal lines and the second metal lines.

• First metal lines embedded in a first dielectric layer
• Second metal lines embedded in a second dielectric layer arranged above the first metal lines
• Top via extending between first and second metal lines, self-aligned to the first metal line
• Presence of at least one air gap adjacent to the top via between the metal lines

Potential Applications: - Advanced semiconductor devices - High-speed integrated circuits - Microprocessors and memory chips

Problems Solved: - Improved signal transmission efficiency - Reduction of crosstalk between metal lines - Enhanced overall performance of semiconductor structures

Benefits: - Increased speed and reliability of electronic devices - Higher integration density on semiconductor chips - Enhanced functionality of complex circuits

Commercial Applications: Title: "Innovative Semiconductor Structure for High-Performance Electronics" This technology could be utilized in the production of: - Next-generation smartphones and tablets - Advanced computing systems - Cutting-edge IoT devices

Questions about the technology: 1. How does the presence of air gaps between metal lines impact the performance of the semiconductor structure? 2. What are the key advantages of having self-aligned top vias in the semiconductor design?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques and materials to further enhance the performance of this innovative structure.

Original Abstract Submitted

a semiconductor structure including first metal lines embedded in a first dielectric layer, second metal lines embedded in a second dielectric layer, where the second metal lines arranged above the first metal lines, a top via extending between one of the first metal lines and one of the second metal lines, where the top via is self-aligned to the one of the first metal lines, and at least one air gap located adjacent to the top via between the first metal lines and the second metal lines.