International business machines corporation (20240282860). NONLINEAR CHANNEL simplified abstract
Contents
NONLINEAR CHANNEL
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Susan Ng Emans of Albany NY (US)
Andrew M. Greene of Slingerlands NY (US)
NONLINEAR CHANNEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282860 titled 'NONLINEAR CHANNEL
Simplified Explanation: The patent application describes a finFET with a nonlinear channel that increases the channel length compared to a linear fin, reducing short channel effects.
Key Features and Innovation:
- Nonlinear channel design with arced, curved, or segmented sidewalls
- Increased channel length within the gate footprint
- Reduction of short channel effects due to decreased electric field along the channel
Potential Applications: The technology can be applied in semiconductor manufacturing for advanced transistors with improved performance and reduced short channel effects.
Problems Solved: The technology addresses the issue of short channel effects in traditional finFET designs, leading to improved transistor performance and reliability.
Benefits:
- Enhanced transistor performance
- Reduced short channel effects
- Improved reliability of semiconductor devices
Commercial Applications: Potential commercial applications include the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Questions about the Technology: 1. How does the nonlinear channel design impact transistor performance compared to traditional finFETs? 2. What are the specific advantages of reducing short channel effects in semiconductor devices?
Frequently Updated Research: Ongoing research in the field of semiconductor manufacturing may lead to further advancements in finFET technology, potentially improving the performance and efficiency of electronic devices.
Original Abstract Submitted
a finfet that includes a nonlinear channel is presented. the nonlinear channel includes one or more arced, curved, segmented, or the like, sidewall(s) that define a channel width and a channel length. the nonlinear channel provides a relatively increased channel length compared to a linear fin that is orientated orthogonal to the gate width. as such, channel length of the nonlinear channel may be relatively increased within the confines of the gate. in other words, short channel effects may be limited due to a reduced electric field along the nonlinear channel due to the relatively increased channel or fin length within the footprint of the gate.
