International business machines corporation (20240266409). BACKSIDE CONTACT FORMATION simplified abstract
Contents
BACKSIDE CONTACT FORMATION
Organization Name
international business machines corporation
Inventor(s)
Tsung-Sheng Kang of Ballston Lake NY (US)
Curtis S. Durfee of Schenectady NY (US)
Ruqiang Bao of Niskayuna NY (US)
Chih-Chao Yang of Glenmont NY (US)
BACKSIDE CONTACT FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266409 titled 'BACKSIDE CONTACT FORMATION
The present invention provides a method for forming a backside source/drain contact in a semiconductor device.
- Formation of a dummy contact structure in the substrate with a central portion and a side portion, where the central portion is higher than the side portion.
- Creation of source/drain regions for transistors above the dummy contact structure.
- Removal of the dummy contact structure to create a backside contact opening.
- Formation of a backside source/drain contact by filling the opening with a conductive material.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Enhancing the efficiency of backside source/drain contact formation - Improving the performance of transistors in semiconductor devices
Benefits: - Increased conductivity and reliability of backside contacts - Enhanced overall performance of semiconductor devices
Commercial Applications: Title: Semiconductor Device Manufacturing: Innovations in Backside Contact Formation This technology could revolutionize the way semiconductor devices are manufactured, leading to more efficient and reliable products in the electronics market.
Questions about Backside Source/Drain Contact: 1. How does the method of forming a backside source/drain contact differ from traditional techniques? - The method involves creating a dummy contact structure to facilitate the formation of the backside contact, improving the overall efficiency and reliability of the process.
2. What are the potential implications of using a conductive material to fill the backside contact opening? - Filling the opening with a conductive material ensures a strong and reliable connection for the backside source/drain contact, enhancing the performance of the semiconductor device.
Original Abstract Submitted
embodiments of present invention provide a method of forming backside source/drain contact. the method includes forming a dummy contact structure in a substrate, the dummy contact structure having a central portion and a side portion, the central portion being higher than the side portion to have a height above the substrate; forming a source/drain region of a first transistor and a second transistor above the dummy contact structure, the first and second transistors being above the substrate; removing the dummy contact structure from a backside of the substrate to create a backside contact opening; and forming a backside source/drain contact by filling the backside contact opening with a conductive material. structure of the backside source/drain contact formed thereby is also provided.
