International business machines corporation (20240224812). RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract
RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Michael Rizzolo of Delmar NY (US)
Julien Frougier of Albany NY (US)
RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224812 titled 'RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK
Simplified Explanation: The semiconductor device described in the patent application includes a magneto-resistive random access memory (MRAM) formed at the backside of a wafer. A self-aligning micro stud and silicide layer are used to electrically connect the MRAM to a source/drain (S/D) of a transistor in the MRAM region of the device.
- The semiconductor device features an MRAM formed at the backside of the wafer.
- A self-aligning micro stud and silicide layer facilitate direct electrical connection between the MRAM and the S/D of a transistor.
- This innovative design enhances the efficiency and performance of the semiconductor device.
Potential Applications: The technology can be applied in various electronic devices requiring non-volatile memory solutions, such as smartphones, tablets, and IoT devices.
Problems Solved: The technology addresses the need for efficient and reliable non-volatile memory solutions in semiconductor devices.
Benefits: - Improved performance and efficiency in semiconductor devices - Enhanced reliability of non-volatile memory solutions - Simplified manufacturing process for semiconductor devices
Commercial Applications: Title: Enhanced Non-Volatile Memory Solutions for Semiconductor Devices This technology can be commercially used in the production of smartphones, tablets, IoT devices, and other electronic gadgets requiring reliable non-volatile memory solutions. The market implications include improved product performance and reliability, leading to increased consumer satisfaction and potentially higher sales.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching advancements in MRAM technology, semiconductor device manufacturing processes, and innovations in non-volatile memory solutions.
Frequently Updated Research: Researchers are continually exploring ways to enhance MRAM technology, improve the efficiency of semiconductor devices, and optimize non-volatile memory solutions. Stay updated on the latest developments in these areas to understand the evolving landscape of this technology.
Questions about Semiconductor Devices with MRAM Technology: 1. What are the key advantages of using MRAM in semiconductor devices? 2. How does the self-aligning micro stud contribute to the efficiency of the semiconductor device?
Original Abstract Submitted
a semiconductor device includes a magneto-resistive random access memory (mram) formed at a backside of a wafer. a self-aligning micro stud and silicide layer can directly electrically connect the mram to a source/drain (s/d) of a transistor in the mram region of the semiconductor device.
