International business machines corporation (20240222378). INVERTER WITH BACKSIDE POWER DELIVERY NETWORK simplified abstract

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INVERTER WITH BACKSIDE POWER DELIVERY NETWORK

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

Oleg Gluschenkov of Tannersville NY (US)

INVERTER WITH BACKSIDE POWER DELIVERY NETWORK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222378 titled 'INVERTER WITH BACKSIDE POWER DELIVERY NETWORK

The semiconductor device described in the abstract consists of a first field effect transistor (FET) and a second FET arranged in a stack on the frontside of a wafer. A middle of line (MOL) contact connects the first FET to a first voltage node, while a direct backside contact connects the second FET to a backside power delivery network.

  • The first FET and the second FET are connected through the MOL contact to an output signal line in the back end of line (BEOL) layer.
  • The MOL contact is connected to an input signal line at the BEOL layer through a gate region.
  • The direct backside contact is connected to a second voltage node.
  • The device allows for efficient power delivery and signal transmission between the two FETs.

Potential Applications: - This technology can be used in high-performance computing systems. - It can also be applied in advanced communication devices.

Problems Solved: - Enables efficient power delivery and signal transmission in semiconductor devices. - Improves overall performance and reliability of the device.

Benefits: - Enhanced power efficiency. - Improved signal integrity. - Increased overall performance of semiconductor devices.

Commercial Applications: - This technology can be utilized in the development of faster and more reliable electronic devices for various industries such as telecommunications, computing, and automotive.

Questions about the technology: 1. How does the direct backside contact improve power delivery in the semiconductor device? 2. What are the specific advantages of connecting the first FET and the second FET through the MOL contact?


Original Abstract Submitted

a semiconductor device includes a first field effect transistor (fet) and a second fet arranged under the first fet to form a stack on the frontside of a wafer. a middle of line (mol) contact has a first end connected to a source or drain of the first fet, and a second end connected to a first voltage node. a direct backside contact is connected to a backside power delivery network, the direct backside contact has a first end connected to a source or drain of the second fet, and a second end connected to a second voltage node. a back end of line (beol) layer has an input signal line and an output signal line. a gate region connects the mol contact to the input signal line at the beol. the first fet and the second fet are connected through the mol contact to the output signal line.

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