International business machines corporation (20240222229). BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract

BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Julien Frougier of ALBANY NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

Ruilong Xie of Niskayuna NY (US)

BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222229 titled 'BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES

The patent application describes a semiconductor structure with back side and front side contact structures that adjoin source/drain regions and help with contact spacing. A bottom dielectric isolation layer with horizontal and vertical portions is situated between gate regions and a back side interlevel dielectric layer. The vertical portions of the bottom dielectric layer also connect to the back side contact structure, providing protection during back side processing.

• The semiconductor structure features back side and front side contact structures that connect to source/drain regions, aiding in contact spacing.
• A bottom dielectric isolation layer with horizontal and vertical portions separates gate regions from a back side interlevel dielectric layer.
• The vertical portions of the bottom dielectric layer also adjoin the back side contact structure, ensuring protection during back side processing.
• Source/drain regions of transistors within the semiconductor structure grow uniformly over semiconductor surfaces.
• The source/drain regions and gate regions are safeguarded during back side processing.

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry

Problems Solved: - Improved contact spacing in semiconductor structures - Protection of source/drain and gate regions during processing

Benefits: - Enhanced performance of transistors - Increased reliability of semiconductor devices

Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and reliability in various industries such as telecommunications, computing, and automotive.

Prior Art: Researchers can explore prior patents related to semiconductor structures, contact spacing, and dielectric isolation layers to understand the evolution of this technology.

Frequently Updated Research: Researchers are constantly studying new materials and processes to further enhance the performance and reliability of semiconductor structures. Stay updated on the latest advancements in the field to leverage cutting-edge innovations.

Questions about Semiconductor Structures: 1. How does the bottom dielectric isolation layer contribute to the protection of source/drain and gate regions? 2. What are the potential challenges in implementing these advanced semiconductor structures in large-scale production?

Original Abstract Submitted

back side and front side contact structures adjoin source/drain regions and facilitate contact spacing in a semiconductor structure. a bottom dielectric isolation layer structure including horizontal and vertical portions is located between the gate regions and a back side interlevel dielectric layer. the vertical portions of the bottom dielectric layer further adjoin the back side contact structure. source/drain regions of transistors within the semiconductor structure are grown uniformly over semiconductor surfaces. the source/drain regions and the gate regions are protected during back side processing.