International business machines corporation (20240213338). FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract
Contents
FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Kisik Choi of Watervliet NY (US)
Nicolas Jean Loubet of Guilderland NY (US)
Julien Frougier of Albany NY (US)
Ruilong Xie of Niskayuna NY (US)
FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213338 titled 'FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT
The semiconductor device in this patent application includes a transistor device with source and drain regions, as well as a gate region. A bottom dielectric isolation layer is located on the backside of the transistor device, followed by a buffer layer. A first conductive contact is positioned on the backside of the transistor device, in contact with the source and drain regions, passing through the bottom dielectric isolation layer and the buffer layer. A second conductive contact is in contact with the gate region from the front side.
- The patent application describes a semiconductor device with improved backside contact structure.
- The device includes a transistor device with source, drain, and gate regions.
- A bottom dielectric isolation layer and a buffer layer are utilized on the backside of the transistor device.
- Two conductive contacts are positioned to provide efficient electrical connections to the source, drain, and gate regions.
- This innovation aims to enhance the performance and reliability of semiconductor devices.
Potential Applications: - This technology can be applied in the manufacturing of advanced integrated circuits. - It can be used in the development of high-performance electronic devices. - The improved backside contact structure can benefit the semiconductor industry in various applications.
Problems Solved: - Enhances the electrical connectivity of semiconductor devices. - Improves the overall performance and reliability of the devices. - Addresses challenges related to backside contact structures in semiconductor technology.
Benefits: - Increased efficiency and reliability of semiconductor devices. - Enhanced electrical connections for improved performance. - Potential for advancements in semiconductor manufacturing processes.
Commercial Applications: Title: Enhanced Backside Contact Structure for Semiconductor Devices This technology has commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices. It can lead to more reliable and efficient semiconductor products, catering to a wide range of applications in various industries.
Questions about the technology: 1. How does the backside contact structure improve the performance of semiconductor devices? 2. What are the potential implications of this innovation on the semiconductor industry?
Original Abstract Submitted
a semiconductor device includes a transistor device, including a source and drain region, and a gate region. a bottom dielectric isolation layer is on a backside of the transistor device. a buffer layer is on a backside of the bottom dielectric isolation layer. a first conductive contact is positioned on a backside of the transistor device in contact with a backside of the source and drain region, through the bottom dielectric isolation layer and through the buffer layer. a second conductive contact is in contact with the gate region from a frontside of the gate region.
