International business machines corporation (20240213315). GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

Organization Name

international business machines corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Andrew M. Greene of Slingerlands NY (US)

Curtis S. Durfee of Schenectady NY (US)

Oleg Gluschenkov of Tannersville NY (US)

Andrew Gaul of Halfmoon NY (US)

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213315 titled 'GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

The semiconductor structure in this patent application includes a gate region, a source/drain region, and a nanosheet semiconductor layer that extends continuously across both regions. The nanosheet semiconductor layer has a first portion in the gate region and a second portion in the source/drain region. The source/drain region also features a cladded epitaxial layer that wraps around the second portion of the nanosheet semiconductor layer.

• The semiconductor structure includes a nanosheet semiconductor layer that spans the gate and source/drain regions.
• The source/drain region has a cladded epitaxial layer surrounding the nanosheet semiconductor layer.
• The nanosheet semiconductor layer is divided into first and second portions within the gate and source/drain regions, respectively.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices with improved performance and efficiency. - It may find applications in the manufacturing of high-speed and low-power electronic devices.

Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a more compact and efficient design for semiconductor structures.

Benefits: - Improved performance and efficiency of semiconductor devices. - Compact design for semiconductor structures. - Potential for high-speed and low-power electronic devices.

Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology could have commercial applications in the semiconductor industry for the production of high-performance electronic devices. It may also be utilized in research and development for cutting-edge semiconductor technologies.

Questions about the technology: 1. How does the nanosheet semiconductor layer improve the performance of semiconductor devices? 2. What are the potential commercial applications of this advanced semiconductor structure technology?

Original Abstract Submitted

a semiconductor structure includes a gate region, a source/drain region, and a nanosheet semiconductor layer extending continuously across the gate region and the source/drain region. the nanosheet semiconductor layer includes a first portion in the gate region and a second portion in the source/drain region. the source/drain region includes a cladded epitaxial layer wrapping around the second portion of the nanosheet semiconductor layer.