International business machines corporation (20240213252). VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract

VTFET CIRCUIT WITH OPTIMIZED MOL

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Ruilong Xie of Niskayuna NY (US)

VTFET CIRCUIT WITH OPTIMIZED MOL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213252 titled 'VTFET CIRCUIT WITH OPTIMIZED MOL

Simplified Explanation: The patent application discusses the use of VTFET logic devices in integrated circuits and related logic structures. Specifically, it focuses on forming two-level middle-of-line (MOL) contact connector structures below the first metallization level wiring during subsequent back-end-of-line (BEOL) processing.

• Damascene and subtractive metal etch techniques are used to create MOL contact connector structures at two levels, with the second level above the first level contact.
• These structures enable cross-connections to VTFET devices, allowing for increased scaling of logic circuit designs, especially for multiplexor circuit layouts.
• The flexible MOL cross-connections below the first metallization level improve wirability, enabling semiconductor circuit layouts with reduced cell size without significant connection issues at higher wiring levels.

Potential Applications: This technology can be applied in the development of advanced integrated circuits, logic circuits, and structures, particularly in multiplexor circuit layouts where increased scaling and improved wirability are crucial.

Problems Solved: The technology addresses the challenges of scaling logic circuit designs, especially in multiplexor layouts, by providing efficient cross-connections to VTFET devices below the first metallization level.

Benefits: - Increased scaling of logic circuit designs - Improved wirability for semiconductor circuit layouts - Enhanced flexibility in cell size reduction without connection issues at higher wiring levels

Commercial Applications: Title: Advanced Logic Circuit Design with VTFET Technology This technology has significant commercial implications in the semiconductor industry, particularly in the development of high-performance integrated circuits for various applications such as data processing, communication systems, and consumer electronics.

Prior Art: Readers interested in exploring prior art related to this technology can start by researching advancements in VTFET logic devices, MOL processing techniques, and BEOL integration in semiconductor manufacturing.

Frequently Updated Research: Researchers are continually exploring new methods to enhance the performance and scalability of VTFET logic devices in integrated circuits, which may lead to further advancements in logic circuit design.

Questions about VTFET Logic Devices: 1. How do VTFET logic devices differ from traditional CMOS logic devices? VTFET logic devices utilize vertical tunneling field-effect transistors, offering unique advantages such as improved performance and scalability compared to traditional CMOS devices.

2. What are the key challenges in integrating VTFET devices into existing logic circuit designs? Integrating VTFET devices into existing logic circuits requires innovative approaches to optimize cross-connections and wiring configurations for enhanced performance and scalability.

Original Abstract Submitted

integrated circuits and related logic circuits and structures employing vtfet logic devices. in particular, during middle-of-line (mol) processing, method steps are employed for forming two-level mol contact connector structures below first (m1) metallization level wiring formed during subsequent beol processing. using damascene and subtractive metal etch techniques, respective mol contact connector structures at two levels are formed with a second level above a first level contact. these contact connector structures at two levels below m1 metallization level can provide cross-connections to vtfet devices of logic circuits that enable increased scaling of the logic circuit designs, e.g., especially for multiplexor circuit layouts due to wiring access. the flexible mol cross-connections made below m1 metallization level provides for much improved m1 and m2 wirability and enable semiconductor circuit layouts that allow for improved cell size reduction without creating significant connection issues at high wiring levels thereby increasing circuit design flexibility.