International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract

VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Reinaldo Vega of Mahopac NY (US)

VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213244 titled 'VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT

Simplified Explanation: The patent application describes a multi-layer integrated circuit structure with a cell boundary defined by transistor-gate pitch regions and an in-line contact region.

• The cell includes a reduced-area transistor-gate pitch region and non-reduced area regions.
• An in-line contact within the contact region connects to a source or drain region.

Key Features and Innovation:

• Multi-layer integrated circuit structure with defined cell boundary.
• Combination of reduced and non-reduced area transistor-gate pitch regions.
• In-line contact for electrical coupling to source or drain regions.

Potential Applications:

• Semiconductor manufacturing.
• Integrated circuit design.
• Electronics industry.

Problems Solved:

• Efficient use of space in integrated circuits.
• Improved connectivity within the circuit structure.

Benefits:

• Enhanced performance of integrated circuits.
• Increased functionality in electronic devices.

Commercial Applications: The technology can be utilized in the production of advanced electronic devices, such as smartphones, computers, and IoT devices, to improve their performance and efficiency.

Prior Art: Readers can explore prior patents related to multi-layer integrated circuit structures and transistor-gate pitch regions to understand the evolution of this technology.

Frequently Updated Research: Stay updated on advancements in semiconductor manufacturing and integrated circuit design to leverage the latest innovations in this field.

Questions about Multi-Layer Integrated Circuit Structure: 1. What are the potential challenges in implementing this technology in mass production? 2. How does the reduced-area transistor-gate pitch region contribute to the overall efficiency of the integrated circuit structure?

Original Abstract Submitted

embodiments of the invention provide a multi-layer integrated circuit (ic) structure that includes a cell having a cell boundary defined by a plurality of transistor-gate pitch (tgp) regions and an in-line contact region. the plurality of tgp regions include a reduced-area tgp region and non-reduced area tgp regions. the reduced-area tgp region is less than each of the non-reduced-area tgp regions. an in-line contact is within the in-line contact region and operable to electrically couple to a source or drain (s/d) region within the in-line contact region.