International business machines corporation (20240213141). DECOUPLING MIM CAPACITOR simplified abstract
Contents
DECOUPLING MIM CAPACITOR
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Tsung-Sheng Kang of Ballston Lake NY (US)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
DECOUPLING MIM CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213141 titled 'DECOUPLING MIM CAPACITOR
Simplified Explanation: This patent application describes semiconductor structures, devices, and methods of fabricating them. One key innovation is a semiconductor device that includes a backside power rail (bspr), a source-drain (s/d) region connected to the bspr, and a metal-insulator-metal capacitor (mimc), where the bspr directly connects to the mimc by a mimc via for backside power rail (vbpr) metal contact.
- The patent application focuses on semiconductor structures, devices, and fabrication methods.
- It introduces a semiconductor device with a bspr, s/d region, and mimc connected through a vbpr metal contact.
Key Features and Innovation:
- Introduction of a semiconductor device with a bspr, s/d region, and mimc.
- Direct connection between bspr and mimc through a vbpr metal contact.
Potential Applications:
- Semiconductor industry for advanced devices.
- Electronics manufacturing for improved performance.
Problems Solved:
- Enhanced connectivity between different components in a semiconductor device.
- Improved power distribution within the device.
Benefits:
- Increased efficiency in power distribution.
- Enhanced performance of semiconductor devices.
Commercial Applications: The technology can be utilized in the semiconductor industry for the development of advanced devices, leading to improved performance and efficiency. This innovation has the potential to impact various electronics manufacturing processes, enhancing overall product quality and functionality.
Questions about Semiconductor Structures, Devices, and Methods of Fabrication: 1. How does the direct connection between the bspr and mimc benefit the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Frequently Updated Research: Researchers are continually exploring new materials and methods to further improve the efficiency and performance of semiconductor devices. Stay updated on the latest advancements in semiconductor technology to leverage the full potential of this innovation.
Original Abstract Submitted
semiconductor structures, devices and methods of fabricating the same, including a semiconductor device that includes a backside power rail (bspr), a source-drain (s/d) region connected to the bspr, and a metal-insulator-metal capacitor (mimc), where the bspr directly connects to the mimc by a mimc via for backside power rail (vbpr) metal contact.
