International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Brent A. Anderson of Jericho VT (US)

Shogo Mochizuki of Mechanicville NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204100 titled 'VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY

Simplified Explanation: This patent application describes a semiconductor structure with self-aligned backside trench epitaxy for field effect transistors. It includes a vertical channel fin, a high-k metal gate stack, and backside metal contact aligned with the bottom source/drain region.

• Key Features and Innovation:

   - Vertical channel fin extending from bottom source/drain region
   - Trench epitaxy layer under the channel fin
   - High-k metal gate stack along channel fin sidewalls
   - Backside metal contact within backside interlayer dielectric

• Potential Applications:

   - Advanced field effect transistors
   - Semiconductor manufacturing industry
   - Integrated circuits and electronic devices

• Problems Solved:

   - Improved performance and efficiency of field effect transistors
   - Enhanced electrical connectivity within semiconductor structures

• Benefits:

   - Higher transistor performance
   - Enhanced electrical connectivity
   - Potential for smaller and more efficient electronic devices

• Commercial Applications:

   - This technology could be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers.

• Prior Art:

   - Researchers and engineers in the semiconductor industry may find relevant prior art in the field of field effect transistors, trench epitaxy, and high-k metal gate technologies.

• Frequently Updated Research:

   - Ongoing research in semiconductor materials, device structures, and manufacturing processes may impact the development and application of this technology.

Questions about Semiconductor Structure with Self-Aligned Backside Trench Epitaxy: 1. What are the potential implications of this technology in the semiconductor industry? 2. How does the backside metal contact improve the performance of the field effect transistor?

Original Abstract Submitted

a semiconductor structure with self-aligned backside trench epitaxy includes a channel fin extending vertically from a bottom source/drain region of a field effect transistor. the bottom source/drain region includes a trench epitaxy later located underneath a bottommost surface of the channel fin. a high-k metal gate stack is disposed along sidewalls of the channel fin. the high-k metal gate is separated from the bottom source/drain region by a bottom spacer. a top source/drain region is located above a topmost surface of the channel fin. the top source/drain region is separated from the high-k metal gate by a top spacer. the semiconductor structure further includes a backside metal contact within a backside interlayer dielectric. the backside metal contact is electrically connected to, and vertically aligned with, the bottom source/drain region.