International business machines corporation (20240204079). SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract

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SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

Organization Name

international business machines corporation

Inventor(s)

Andrew Gaul of Halfmoon NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Andrew M. Greene of Slingerlands NY (US)

SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204079 titled 'SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

The semiconductor device described in the patent application consists of a substrate supporting a stack of nanosheets, with a plurality of semiconductor channels, including a top channel, within the stack. A gate body, comprising a layer of metal on top of the top channel, is connected to the top channel. A spacer body with a top dielectric layer on top of the metal layer determines the thickness of the metal layer above the top channel based on the distance between the bottom surface of the top dielectric layer and the top surface of the top channel.

  • The semiconductor device features a stack of nanosheets supported by a substrate.
  • The stack includes multiple semiconductor channels, with a top channel being a key component.
  • A gate body, consisting of a metal layer, is connected to the top channel.
  • A spacer body with a top dielectric layer determines the thickness of the metal layer above the top channel.
  • The distance between the top dielectric layer and the top channel influences the metal layer thickness.

Potential Applications: - This technology could be applied in the development of advanced semiconductor devices. - It may find use in the manufacturing of high-performance electronic components.

Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Allows for precise control and manipulation of semiconductor channels.

Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced precision in semiconductor channel control.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could have significant implications in the semiconductor industry, leading to the development of more efficient and high-performance electronic devices. It may find applications in various sectors, including telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the thickness of the metal layer impact the performance of the semiconductor device? - The thickness of the metal layer influences the conductivity and control of the semiconductor channels, affecting the overall performance of the device. 2. What are the potential challenges in implementing this technology on a larger scale? - Scaling up the production of semiconductor devices with this technology may pose challenges in terms of manufacturing processes and cost considerations.


Original Abstract Submitted

a semiconductor device includes a substrate and a stack of nanosheets supported by the substrate. a plurality of semiconductor channels in the stack of nanosheets includes a top channel. a gate body is coupled to the top channel. the gate body includes a layer of metal positioned on top of the top channel. a spacer body includes a top dielectric layer positioned on top of the layer of metal. a thickness of the layer of metal above the top channel is based on a distance from a bottom surface of the top dielectric layer to a top surface of the top channel.

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