International business machines corporation (20240204067). CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract

CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Koichi Motoyama of Clifton Park NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204067 titled 'CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE

Simplified Explanation: The semiconductor structure in this patent application features improved backside metal contacts for field effect transistors, with a unique taper profile design.

• The semiconductor structure includes multiple source/drain regions within a field effect transistor.
• A backside metal contact is connected to at least one of these source/drain regions, featuring a first taper profile.
• A backside power rail is also connected to the source/drain region through the backside metal contact, with a different second taper profile.

Key Features and Innovation:

• Improved backside metal contacts for field effect transistors.
• Unique taper profile design for the backside metal contact and power rail.
• Enhanced electrical connectivity within the semiconductor structure.

Potential Applications:

• Semiconductor manufacturing
• Electronics industry
• Integrated circuits

Problems Solved:

• Enhanced electrical connectivity
• Improved performance of field effect transistors

Benefits:

• Better overall performance of semiconductor structures
• Increased efficiency in electronic devices

Commercial Applications:

• Title: "Enhanced Backside Metal Contacts for Semiconductor Structures"
• Potential commercial uses in semiconductor manufacturing companies
• Market implications in the electronics industry

Questions about the Technology: 1. What are the specific advantages of the unique taper profile design in the backside metal contacts? 2. How does this innovation impact the overall efficiency of field effect transistors?

Frequently Updated Research: Stay updated on the latest developments in semiconductor manufacturing techniques to enhance the performance of field effect transistors.

Original Abstract Submitted

a semiconductor structure with improved backside metal contacts includes a plurality of source/drain regions within a field effect transistor. a backside metal contact is electrically connected to at least one source/drain region of the plurality of source/drain regions. the backside metal contact includes a first taper profile. the semiconductor structure further includes a backside power rail electrically connected to the at least one source/drain region through the backside metal contact. the backside power rail includes a second taper profile that is different from the first taper profile.