International business machines corporation (20240204042). DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract
Contents
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Tao Li of Slingerlands NY (US)
Julien Frougier of Albany NY (US)
Susan Ng Emans of Albany NY (US)
Carl Radens of LaGrangeville NY (US)
Dureseti Chidambarrao of Weston CT (US)
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204042 titled 'DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
The semiconductor device described in the abstract includes a first gate region, a second gate region, and a diffusion break region between them. The top surface of the diffusion break region is co-planar with the top surface of one or more gate contacts and one or more source/drain contacts.
- The semiconductor device features a diffusion break region that is co-planar with gate and source/drain contacts.
- This design ensures uniformity and consistency in the top surfaces of the different regions of the device.
- By aligning the surfaces, the device can achieve better performance and reliability.
- The innovation simplifies the manufacturing process and improves the overall quality of the semiconductor device.
- This technology can be applied to various types of semiconductor devices, enhancing their functionality and efficiency.
Potential Applications: - Integrated circuits - Microprocessors - Memory devices
Problems Solved: - Inconsistencies in top surface alignment - Manufacturing complexity - Performance variability
Benefits: - Improved device performance - Enhanced reliability - Simplified manufacturing process
Commercial Applications: Title: "Enhanced Semiconductor Devices for Improved Performance" This technology can be utilized in the production of various electronic devices, leading to more reliable and efficient products. The market implications include increased demand for high-quality semiconductor components in the electronics industry.
Questions about the technology: 1. How does the alignment of the diffusion break region with gate and source/drain contacts impact the overall performance of the semiconductor device? 2. What are the specific advantages of having a co-planar top surface design in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a first gate region and a second gate region. a diffusion break region is between the first gate region and the second gate region. a top surface of the diffusion break region is co-planar with at least one of a top surface of one or more gate contacts and a top surface of one or more source/drain contacts.
