International business machines corporation (20240204008). STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract
Contents
STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP
Organization Name
international business machines corporation
Inventor(s)
Chanro Park of Clifton Park NY (US)
Ruilong Xie of Niskayuna NY (US)
Min Gyu Sung of Latham NY (US)
Julien Frougier of Albany NY (US)
STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204008 titled 'STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP
Simplified Explanation: The patent application relates to forming a via to a backside power rail (VBPR) on a semiconductor device to prevent short circuits and enable conductive connections.
- A VBPR with a via spacer is formed before creating a replacement metal gate (RMG) to prevent short circuits.
- The via spacer is removed in locations where a source/drain region is adjacent to the VBPR to allow a conductive connection.
Key Features and Innovation:
- Formation of a via to a backside power rail (VBPR) on a semiconductor device.
- Use of a via spacer to prevent short circuits between the VBPR and a replacement metal gate (RMG).
- Removal of the via spacer in locations adjacent to source/drain regions for conductive connections.
Potential Applications: The technology can be applied in the semiconductor industry for manufacturing advanced integrated circuits with improved reliability and performance.
Problems Solved:
- Prevention of short circuits between the VBPR and RMG.
- Enablement of conductive connections between the VBPR and adjacent source/drain regions.
Benefits:
- Enhanced reliability of semiconductor devices.
- Improved performance of integrated circuits.
- Efficient fabrication process for forming vias.
Commercial Applications: The technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and automotive electronics.
Prior Art: Readers can explore prior patents related to semiconductor device fabrication processes, via formation, and power rail design to understand the background of this innovation.
Frequently Updated Research: Researchers may find updated studies on semiconductor device fabrication techniques, materials, and design considerations relevant to this technology.
Questions about Semiconductor Device Fabrication: 1. How does the via spacer prevent short circuits in the semiconductor device? 2. What are the advantages of forming a conductive connection between the VBPR and adjacent source/drain regions?
Original Abstract Submitted
one or more systems, devices and/or methods of fabrication provided herein relate to forming a via to backside power rail (vbpr) on a semiconductor device. according to one embodiment, a vbpr with a via spacer is formed before a late gate cut is performed to create a replacement metal gate (rmg), wherein the via spacer prevents a short circuit between the vbpr and the rmg. further, the via spacer is removed in locations on the vbpr where a source/drain region is adjacent to the vbpr, allowing a conductive connection between the vbpr and the adjacent source/drain region.
