International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract

LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203993 titled 'LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER

The abstract of the patent application describes a multi-layer integrated circuit structure with two transistors and a contact element connecting them.

• The structure includes a first transistor with a source/drain, a second transistor with a source/drain and a gate, and a contact element with horizontal features.
• The contact element connects the source/drain of the first transistor to the gate of the second transistor.

Potential Applications:

• This technology can be used in various electronic devices such as smartphones, computers, and other integrated circuits.
• It can improve the performance and efficiency of electronic devices by enhancing the connectivity between transistors.

Problems Solved:

• Enhances the connectivity between transistors in an integrated circuit.
• Improves the overall performance and efficiency of electronic devices.

Benefits:

• Increased connectivity and efficiency in integrated circuits.
• Enhanced performance of electronic devices.
• Potential cost savings in manufacturing processes.

Commercial Applications:

• This technology can be utilized in the semiconductor industry for the production of advanced integrated circuits.
• It can also be applied in consumer electronics for improved device performance.

Questions about the Technology: 1. How does the contact element improve the connectivity between transistors in the integrated circuit? 2. What are the potential cost savings associated with implementing this technology in manufacturing processes?

Frequently Updated Research: There may be ongoing research in the semiconductor industry related to improving the connectivity and efficiency of integrated circuits. Researchers may be exploring new materials and designs to further enhance the performance of electronic devices.

Original Abstract Submitted

embodiments of the invention provide a multi-layer integrated circuit (ic) structure that includes a first transistor, a second transistor, and a contact element. the first transistor includes a first source or drain (s/d). the second transistor includes a second s/d and a gate. the contact element includes substantially horizontal features operable to connect the first s/d of the first transistor to the gate of the second transistor.