International business machines corporation (20240203985). STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract

STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs)

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203985 titled 'STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs)

The abstract describes a semiconductor device with a top layer containing a top vertical-transport field effect transistor (VTFET), a bottom layer with a first bottom VTFET, and frontside and backside contacts for wiring connections.

• The semiconductor device features a top vertical-transport field effect transistor (VTFET) in the top layer.
• A first bottom VTFET is included in the bottom layer of the device.
• Frontside and backside contacts, along with a local interconnect, facilitate wiring connections for the bottom source/drain epitaxial of the first bottom VTFET.
• The wiring extends to the back end of line interconnect for connectivity within the device.
• This design allows for efficient vertical transport of electrical signals within the semiconductor device.

Potential Applications: - This technology can be applied in high-performance computing systems. - It may find use in power electronics for efficient energy management. - Applications in telecommunications infrastructure for signal processing and transmission.

Problems Solved: - Improved vertical transport of electrical signals. - Enhanced connectivity within the semiconductor device. - Efficient power management and signal processing capabilities.

Benefits: - Increased performance and efficiency in computing systems. - Enhanced power management capabilities. - Improved signal processing and transmission efficiency.

Commercial Applications: Title: Semiconductor Device with Vertical-Transport Field Effect Transistors Commercial Uses: This technology can be utilized in the development of advanced computing systems, power electronics, and telecommunications infrastructure, potentially leading to more efficient and high-performance devices in the market.

Questions about Semiconductor Device with Vertical-Transport Field Effect Transistors: 1. What are the key advantages of using vertical-transport field effect transistors in semiconductor devices? 2. How does the inclusion of frontside and backside contacts improve the connectivity within the device?

Original Abstract Submitted

embodiments are disclosed for a semiconductor device including a top layer having a top vertical-transport field effect transistor (vtfet). further, the semiconductor device includes a bottom layer disposed beneath the top layer, wherein the bottom layer includes a first bottom vtfet. additionally, the semiconductor device includes a first frontside contact that wires, through a first backside contact and a first local interconnect, a bottom source/drain epitaxial of the first bottom vtfet to the back end of line interconnect.