International business machines corporation (20240203904). STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER simplified abstract

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STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER

Organization Name

international business machines corporation

Inventor(s)

FEE LI Lie of Albany NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Michael Rizzolo of Delmar NY (US)

Aakrati Jain of Albany NY (US)

Sagarika Mukesh of ALBANY NY (US)

Christopher J. Waskiewicz of Rexford NY (US)

STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203904 titled 'STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER

Simplified Explanation: The patent application describes a semiconductor structure with a stress modulating pattern containing a bonding dielectric layer, which can be used to modulate warpage in wafers and device-containing regions.

  • The stress modulating pattern is composed of patterned structures embedded within a bonding dielectric layer.
  • This technology can achieve warpage modulation in semiconductor structures.
  • The stress modulating pattern can be applied to wafers, device-containing regions on a wafer, or both.
  • The patterned structures can be made of metal and/or dielectric materials.

Potential Applications: 1. Semiconductor manufacturing 2. Electronics industry 3. Nanotechnology research

Problems Solved: 1. Warpage in semiconductor structures 2. Stress management in wafers 3. Enhanced device performance

Benefits: 1. Improved device reliability 2. Enhanced wafer flatness 3. Increased manufacturing efficiency

Commercial Applications: The technology can be used in the production of various semiconductor devices, such as microprocessors, memory chips, and sensors, to improve performance and reliability.

Questions about Semiconductor Structures with Stress Modulating Patterns: 1. How does the stress modulating pattern affect warpage in semiconductor structures? 2. What materials can be used to create the patterned structures in the bonding dielectric layer?

Frequently Updated Research: Ongoing research in semiconductor manufacturing focuses on optimizing stress modulation techniques to further improve device performance and reliability.


Original Abstract Submitted

a semiconductor structure is provided that includes a stress modulating pattern containing bonding dielectric layer. the stress modulating pattern containing bonding dielectric layer can be formed on a wafer, on a device-containing region that is present on a device wafer, or both a wafer and a device-containing region that is present on a device wafer. the stress modulating pattern is composed of a plurality of patterned structures (metal and/or dielectric) that are embedded at least partially within a bonding dielectric layer. warpage modulation can be achieved using such a stress modulating pattern containing bonding dielectric layer.