International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract

FLEXIBLE MOL AND/OR BEOL STRUCTURE

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

Ruilong Xie of Niskayuna NY (US)

FLEXIBLE MOL AND/OR BEOL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203870 titled 'FLEXIBLE MOL AND/OR BEOL STRUCTURE

The semiconductor structure described in the abstract includes a first metal level with metal lines and vias, a second metal level above the first, and the use of a single metallization process for both levels.

• The structure aims to achieve low resistance, low capacitance, and design flexibility.
• The first metal level is created using a damascene process, while the second metal level is formed using a subtractive etch.
• Both metal levels are located within interlayer dielectric material layers for efficient performance.
• By utilizing a single metallization process, the structure simplifies manufacturing and enhances overall performance.

Potential Applications: - This semiconductor structure can be used in integrated circuits, microprocessors, and other electronic devices. - It can improve the performance and efficiency of various electronic systems.

Problems Solved: - Addresses the need for low resistance and low capacitance in semiconductor structures. - Provides design flexibility for different applications in the semiconductor industry.

Benefits: - Enhanced performance with low resistance and capacitance. - Simplified manufacturing process with a single metallization step. - Improved design flexibility for customization in various electronic devices.

Commercial Applications: - This technology can be applied in the production of advanced electronic devices, leading to improved performance and efficiency in the market.

Questions about the Semiconductor Structure: 1. How does the use of a single metallization process benefit the overall performance of the semiconductor structure? 2. What are the potential implications of this technology in the semiconductor industry?

Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing processes and materials to enhance the performance of the structure.

Original Abstract Submitted

a semiconductor structure is provided that includes a mol and/or beol structure for low resistance, low capacitance and design flexibility. the structure includes a first metal level including a plurality of first metal lines and a plurality of first metal vias located at same level within a first interlayer dielectric material layer, and a second metal level located above the first metal level. the second metal level includes a plurality of second metal lines and a plurality of second metal vias located at a same level within a second interlayer dielectric material layer. the first metal level is formed utilizing a damascene process and the second metal level is formed utilizing a substrative etch. a single metallization is used to provide the first and second metal levels.