International business machines corporation (20240203792). SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract
Contents
SELF-ALIGNED BACKSIDE GATE CONTACTS
Organization Name
international business machines corporation
Inventor(s)
Tsung-Sheng Kang of Ballston Lake NY (US)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
SELF-ALIGNED BACKSIDE GATE CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203792 titled 'SELF-ALIGNED BACKSIDE GATE CONTACTS
The abstract of the patent application describes semiconductor devices and methods of forming them, including a channel over a backside layer with a dielectric fill containing a first dielectric material. A gate conductor on the channel makes electrical contact with the backside layer through the dielectric fill. A dielectric liner on the sidewalls of the dielectric fill, made of a second dielectric material, is in contact with the gate conductor at the dielectric fill.
- Channel over a backside layer
- Dielectric fill with a first dielectric material
- Gate conductor making electrical contact with the backside layer through the dielectric fill
- Dielectric liner on sidewalls of the dielectric fill with a second dielectric material
- Contact between the dielectric liner and the gate conductor at the dielectric fill
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Enhancing electrical contact in semiconductor devices - Improving performance and reliability of electronic components
Benefits: - Increased efficiency in semiconductor devices - Enhanced electrical connectivity - Improved overall device performance
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be applied in the production of high-performance electronic devices, leading to improved functionality and reliability. The market implications include the potential for faster and more efficient electronic products.
Questions about the technology: 1. How does the dielectric fill impact the performance of the semiconductor devices? 2. What are the advantages of using a dielectric liner on the sidewalls of the dielectric fill?
Original Abstract Submitted
semiconductor devices and methods of forming the same include a channel over a backside layer. a dielectric fill is on the backside layer, including a first dielectric material. a gate conductor is on the channel and makes electrical contact with the backside layer through the dielectric fill. a dielectric liner is on sidewalls of the dielectric fill, including a second dielectric material, in contact with the gate conductor at the dielectric fill.
