International business machines corporation (20240203780). DIELECTRIC FILLED ALIGNMENT MARK STRUCTURES simplified abstract
Contents
DIELECTRIC FILLED ALIGNMENT MARK STRUCTURES
Organization Name
international business machines corporation
Inventor(s)
Somnath Ghosh of Clifton Park NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
DIELECTRIC FILLED ALIGNMENT MARK STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203780 titled 'DIELECTRIC FILLED ALIGNMENT MARK STRUCTURES
The semiconductor structure described in the patent application consists of a handler substrate and a device substrate bonded to the handler substrate. The handler substrate features a trench with at least one alignment mark in the bottom surface of the trench. Additionally, one or more dielectric layers are placed in the trench and on the alignment mark.
- The semiconductor structure includes a handler substrate and a device substrate bonded together.
- The handler substrate has a trench with at least one alignment mark at the bottom.
- One or more dielectric layers are positioned in the trench and on the alignment mark.
Potential Applications: This technology could be utilized in the semiconductor industry for the fabrication of advanced electronic devices, such as integrated circuits and microprocessors.
Problems Solved: This innovation helps in aligning and bonding the device substrate to the handler substrate accurately, improving the overall performance and reliability of semiconductor devices.
Benefits: - Enhanced alignment accuracy - Improved bonding reliability - Increased performance of semiconductor devices
Commercial Applications: The technology can be applied in the manufacturing of various electronic devices, leading to more efficient and reliable products in the market.
Questions about Semiconductor Structure: 1. How does the alignment mark in the trench contribute to the overall performance of the semiconductor structure? 2. What are the specific advantages of using dielectric layers in the trench of the handler substrate?
Original Abstract Submitted
a semiconductor structure includes a handler substrate and a device substrate bonded to the handler substrate. the handler substrate comprises a trench, and at least one alignment mark in a bottom surface of the trench. one or more dielectric layers are disposed in the trench and on the at least one alignment mark.
