International business machines corporation (20240201583). PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION FOR HETEROGENEOUS INTEGRATION simplified abstract

PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION FOR HETEROGENEOUS INTEGRATION

Organization Name

international business machines corporation

Inventor(s)

Cheng Chi of Jersey City NJ (US)

Takashi Ando of Eastchester NY (US)

Praneet Adusumilli of Somerset NJ (US)

Reinaldo Vega of Mahopac NY (US)

David Wolpert of Poughkeepsie NY (US)

PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION FOR HETEROGENEOUS INTEGRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240201583 titled 'PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION FOR HETEROGENEOUS INTEGRATION

The patent application describes a system and method for intentionally distorting a feature of a pattern using sub-resolution assist features (SRAF) for identification and security purposes in semiconductor manufacturing.

• Leveraging sub-resolution assist feature (SRAF) to intentionally distort a feature of a pattern
• Designing a lithographic mask structure with main features and SRAF structures for forming a uniquely modified identifier pattern
• Employing lithography process to transfer the modified identifier pattern to a semiconductor wafer surface
• Enhancing security and identification through intentionally distorted patterns
• Utilizing SRAF structures in a geometrical relationship with main features for unique pattern formation

1. 1. 1. Potential Applications:

This technology can be applied in semiconductor manufacturing for creating secure identifiers on semiconductor structures, enhancing security measures in various industries, and improving anti-counterfeiting efforts.

1. 1. 1. Problems Solved:

- Enhances security by distorting patterns for identification purposes - Provides a unique way to create identifiers on semiconductor structures - Improves anti-counterfeiting measures through unique pattern formation

1. 1. 1. Benefits:

- Increased security through intentionally distorted patterns - Enhanced identification capabilities in semiconductor manufacturing - Improved anti-counterfeiting measures with unique identifier patterns

1. 1. 1. Commercial Applications:

Title: Enhanced Security and Identification Technology in Semiconductor Manufacturing This technology can be commercially used in semiconductor manufacturing for creating secure identifiers, in the security industry for authentication purposes, and in anti-counterfeiting efforts across various sectors.

1. 1. 1. Prior Art:

Readers can explore prior art related to sub-resolution assist features (SRAF) in semiconductor manufacturing, lithography processes for pattern formation, and security measures in pattern distortion for identification purposes.

1. 1. 1. Frequently Updated Research:

Researchers are continually exploring advancements in sub-resolution assist features (SRAF) technology, lithography processes, and security measures in pattern distortion for enhanced identification and security applications.

1. 1. 1. 1. Questions about the Technology:

1. How does the use of sub-resolution assist features (SRAF) contribute to pattern distortion for identification purposes? 2. What are the potential security implications of utilizing intentionally distorted patterns in semiconductor manufacturing?

Original Abstract Submitted

a system and method of leveraging sub-resolution assist feature (sraf) to intentionally distort a feature of a pattern for identification and security purposes. a method of forming an identifier on a semiconductor structure includes: receiving, at a semiconductor manufacturing foundry, a specification of an identifier including a pattern comprising a combination of main features; designing a lithographic mask structure based on the received identifier specification, the lithographic mask structure including mask features corresponding to the specified main features and at least one sub-resolution assist feature (sraf) structure in a geometrical relationship with a corresponding mask feature for forming, using a lithography process, a uniquely modified identifier pattern comprising a combination of modified main features; and then subsequently lithographically exposing, employing the mask structure, photoresist layers at an optical condition and subsequently developing the photoresist layers to transfer the uniquely modified identifier pattern to a surface of a semiconductor wafer.